Authors: YOSHINOUCHI A ODA A MURATA Y MORITA T TSUCHIMOTO S

Citation: A. Yoshinouchi et al., FORMATION OF SOURCES DRAINS USING SELF-ACTIVATION TECHNIQUE ON POLYSILICON THIN-FILM TRANSISTORS/, JPN J A P 1, 33(9A), 1994, pp. 4833-4836

Authors: OHNO E YOSHINOUCHI A HOSODA T ITOH M MORITA T TSUCHIMOTO S

Citation: E. Ohno et al., FABRICATION OF SELF-ALIGNED ALUMINUM GATE POLYSILICON THIN-FILM TRANSISTORS USING LOW-TEMPERATURE CRYSTALLIZATION PROCESS, JPN J A P 1, 33(1B), 1994, pp. 635-638

Authors: YOSHINOUCHI A ODA A ITOH M MORITA T TSUCHIMOTO S

Citation: A. Yoshinouchi et al., POLYSILICON TFTS FABRICATED AT LOW-TEMPERATURE USING ION DOPING SELF-ACTIVATION TECHNIQUE, Sharp giho, (56), 1993, pp. 11-14