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Citation: V. Yam et al., Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots - art. no. 033313, PHYS REV B, 6303(3), 2001, pp. 3313

Authors: Dashiell, MW Kolodzey, J Boucaud, P Yam, V Lourtioz, JM

Citation: Mw. Dashiell et al., Heterostructures of pseudomorphic Ge1-yCy and Ge1-x-ySixCy alloys grown onGe (001) substrates, J VAC SCI B, 18(3), 2000, pp. 1728-1731

Authors: Le Thanh, V Yam, V Zheng, Y Bouchier, D

Citation: V. Le Thanh et al., Nucleation and growth of self-assembled Ge/Si (001) quantum dots in singleand stacked layers, THIN SOL FI, 380(1-2), 2000, pp. 2-9

Authors: Yam, V Le Thanh, V Compagnon, U Gennser, U Boucaud, P Debarre, D Bouchier, D

Citation: V. Yam et al., Effect of the bimodal size distribution on the optical properties of self-assembled Ge/Si(001) quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 78-81

Authors: Le Thanh, V Yam, V Boucaud, P Zheng, Y Bouchier, D

Citation: V. Le Thanh et al., Strain-driven modification of the Ge/Si growth mode in stacked layers: A way to produce Ge islands having equal size in all layers, THIN SOL FI, 369(1-2), 2000, pp. 43-48

Authors: Le Thanh, V Yam, V Boucaud, P Fortuna, F Ulysse, C Bouchier, D Vervoort, L Lourtioz, JM

Citation: V. Le Thanh et al., Vertically self-organized Ge/Si(001) quantum dots in multilayer structures, PHYS REV B, 60(8), 1999, pp. 5851-5857