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Results:
1-10
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Results: 10
Authors:
Lee, JH
Choi, IY
Kil, IS
Kim, SY
Yang, ES
Park, JW
Citation: Jh. Lee et al., Protective role of superoxide dismutases against ionizing radiation in yeast, BBA-GEN SUB, 1526(2), 2001, pp. 191-198
Authors:
Yan, BP
Wang, XQ
Yang, ES
Citation: Bp. Yan et al., Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors, J APPL PHYS, 90(10), 2001, pp. 5351-5356
Authors:
Yan, BP
Yang, ES
Yang, YF
Wang, XQ
Hsu, CC
Citation: Bp. Yan et al., InGaP/GaAs power heterostructure-emitter bipolar transistor, ELECTR LETT, 37(20), 2001, pp. 1262-1264
Authors:
Newchurch, MJ
Bishop, L
Cunnold, D
Flynn, LE
Godin, S
Frith, SH
Hood, L
Miller, AJ
Oltmans, S
Randel, W
Reinsel, G
Stolarski, R
Wang, R
Yang, ES
Zawodny, JM
Citation: Mj. Newchurch et al., Upper-stratospheric ozone trends 1979-1998, J GEO RES-A, 105(D11), 2000, pp. 14625-14636
Authors:
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
Citation: Es. Yang et al., Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors, IEEE DEVICE, 47(7), 2000, pp. 1315-1319
Authors:
Yang, ES
Schirch, V
Citation: Es. Yang et V. Schirch, Tight binding of pyridoxal 5 '-phosphate to recombinant Escherichia coli pyridoxine 5 '-phosphate oxidase, ARCH BIOCH, 377(1), 2000, pp. 109-114
Authors:
Yang, ES
Yang, YF
Hsu, CC
Ou, HJ
Lo, HB
Citation: Es. Yang et al., Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors, IEEE DEVICE, 46(2), 1999, pp. 320-323
Authors:
Liao, HK
Yang, ES
Chou, JC
Chung, WY
Sun, TP
Hsiung, SK
Citation: Hk. Liao et al., Temperature and optical characteristics of tin oxide membrane gate ISFET, IEEE DEVICE, 46(12), 1999, pp. 2278-2281
Authors:
De Marzo, AM
Marchi, VL
Yang, ES
Veeraswamy, R
Lin, XH
Nelson, WG
Citation: Am. De Marzo et al., Abnormal regulation of DNA methyltransferase expression during colorectal carcinogenesis, CANCER RES, 59(16), 1999, pp. 3855-3860
Authors:
Lo, HB
Yang, ES
Yang, YF
Citation: Hb. Lo et al., Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor, APPL PHYS L, 74(12), 1999, pp. 1725-1727
Risultati:
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