AAAAAA

   
Results: 1-25 | 26-29
Results: 1-25/29
Characteristics of TaOxNy gate dielectric with improved thermal stability
Authors: Cho, HJ Park, DG Yeo, IS Roh, JS Park, JW
Citation: Hj. Cho et al., Characteristics of TaOxNy gate dielectric with improved thermal stability, JPN J A P 1, 40(4B), 2001, pp. 2814-2818
Reliability of thin gate oxides irradiated under X-ray lithography conditions
Authors: Cho, BJ Kim, SJ Ang, CH Ling, CH Joo, MS Yeo, IS
Citation: Bj. Cho et al., Reliability of thin gate oxides irradiated under X-ray lithography conditions, JPN J A P 1, 40(4B), 2001, pp. 2819-2822
Sidewall oxidation behavior of dichlorosilane-based W-polycide gate
Authors: Kim, HS Lee, SM Yeo, IS Lee, SD Pyi, SH
Citation: Hs. Kim et al., Sidewall oxidation behavior of dichlorosilane-based W-polycide gate, J VAC SCI B, 19(2), 2001, pp. 361-365
Oxidation behavior of a patterned TiSi2/polysilicon stack
Authors: Kim, TK Jang, SA Yeo, IS Yang, JM Park, TS Park, JW
Citation: Tk. Kim et al., Oxidation behavior of a patterned TiSi2/polysilicon stack, J VAC SCI B, 19(2), 2001, pp. 366-371
Wet oxidation behaviors of polycrystalline Si1-xGex films
Authors: Kang, SK Ko, DH Lee, KC Lee, TW Lee, YH Ahn, TH Yeo, IS Oh, SH Park, CG
Citation: Sk. Kang et al., Wet oxidation behaviors of polycrystalline Si1-xGex films, J VAC SCI A, 19(4), 2001, pp. 1617-1622
Characteristics of n(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor
Authors: Park, DG Cho, HJ Lim, KY Lim, C Yeo, IS Roh, JS Park, JW
Citation: Dg. Park et al., Characteristics of n(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor, J APPL PHYS, 89(11), 2001, pp. 6275-6280
Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors
Authors: Park, DG Cho, HJ Lim, KY Cha, TH Yeo, IS Park, JW
Citation: Dg. Park et al., Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors, J ELCHEM SO, 148(9), 2001, pp. F189-F193
Impacts of self-aligned epitaxial silicon sliver (SESS) in buried channel-pFETs elevated source/drain using dual-spacer structure
Authors: Lee, JH Yeo, IS Kwak, HS Kim, CT
Citation: Jh. Lee et al., Impacts of self-aligned epitaxial silicon sliver (SESS) in buried channel-pFETs elevated source/drain using dual-spacer structure, JPN J A P 1, 39(4B), 2000, pp. 2151-2154
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
Authors: Chong, PF Cho, BJ Chor, EF Joo, MS Yeo, IS
Citation: Pf. Chong et al., Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions, JPN J A P 1, 39(4B), 2000, pp. 2181-2185
Abnormal oxidation of TiSi2 film in patterned TiSi2 /Polysilicon gate stack
Authors: Jang, SA Kim, TK Yang, JM Park, TS Park, DG Yeo, IS Park, JW
Citation: Sa. Jang et al., Abnormal oxidation of TiSi2 film in patterned TiSi2 /Polysilicon gate stack, EL SOLID ST, 3(11), 2000, pp. 511-513
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
Authors: Yue, JMP Chim, WK Cho, BJ Chan, DSH Qin, WH Kim, YB Jang, SA Yeo, IS
Citation: Jmp. Yue et al., Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure, IEEE ELEC D, 21(3), 2000, pp. 130-132
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
Authors: Cho, BJ Kim, SJ Ling, CH Joo, MS Yeo, IS
Citation: Bj. Cho et al., A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation, SOL ST ELEC, 44(7), 2000, pp. 1289-1292
Does short wavelength lithography process degrade the integrity of thin gate oxide?
Authors: Kim, SJ Cho, BJ Chong, PF Chor, EF Ang, CH Ling, CH Joo, MS Yeo, IS
Citation: Sj. Kim et al., Does short wavelength lithography process degrade the integrity of thin gate oxide?, MICROEL REL, 40(8-10), 2000, pp. 1609-1613
Electron-beam irradiation-induced gate oxide degradation
Authors: Cho, BJ Chong, PF Chor, EF Joo, MS Yeo, IS
Citation: Bj. Cho et al., Electron-beam irradiation-induced gate oxide degradation, J APPL PHYS, 88(11), 2000, pp. 6731-6735
Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films
Authors: Suh, YS Park, DG Jang, SA Lee, SH Kim, TK Yeo, IS Kim, SD Kim, CT
Citation: Ys. Suh et al., Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films, J APPL PHYS, 87(6), 2000, pp. 2760-2764
Boron penetration in p(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor system
Authors: Park, DG Cho, HJ Yeo, IS Roh, JS Hwang, JM
Citation: Dg. Park et al., Boron penetration in p(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor system, APPL PHYS L, 77(14), 2000, pp. 2207-2209
Silicidation on chemical mechanical polished electrode process for metal-silicide/polysilicon gate application
Authors: Kim, HS Jang, SA Kim, TK Yeo, IS Lee, SK
Citation: Hs. Kim et al., Silicidation on chemical mechanical polished electrode process for metal-silicide/polysilicon gate application, EL SOLID ST, 2(5), 1999, pp. 244-246
A gate electrode fabrication technique using dichlorosilane-based W-polycide with monosilane-based WSix nucleation layer
Authors: Kim, HS Lee, SD Lee, SM Yeo, IS Lee, SK
Citation: Hs. Kim et al., A gate electrode fabrication technique using dichlorosilane-based W-polycide with monosilane-based WSix nucleation layer, EL SOLID ST, 2(2), 1999, pp. 88-90
Effects of nitridation pressure on the characteristics of gate dielectricsannealed in N2O ambient
Authors: Joo, MS Yeo, IS Lee, CH Cho, HJ Jang, SA Lee, SK
Citation: Ms. Joo et al., Effects of nitridation pressure on the characteristics of gate dielectricsannealed in N2O ambient, IEEE ELEC D, 20(9), 1999, pp. 445-447
Roles of sidewall oxidation in the devices with shallow trench isolation
Authors: Pyi, SH Yeo, IS Weon, DH Kim, YB Kim, HS Lee, SK
Citation: Sh. Pyi et al., Roles of sidewall oxidation in the devices with shallow trench isolation, IEEE ELEC D, 20(8), 1999, pp. 384-386
Influence of crystal originated particles on gate oxide integrity of metal-oxide-semiconductor capacitors with shallow trench isolation
Authors: Koh, CG Yeo, IS Pyi, SH Lee, SK
Citation: Cg. Koh et al., Influence of crystal originated particles on gate oxide integrity of metal-oxide-semiconductor capacitors with shallow trench isolation, J KOR PHYS, 35, 1999, pp. S1038-S1042
The role of polysilicon film in the suppression of bird's beak in poly-buffered LOCOS
Authors: Jang, SA Han, CS Kim, YB Yeo, IS
Citation: Sa. Jang et al., The role of polysilicon film in the suppression of bird's beak in poly-buffered LOCOS, IEEE DEVICE, 46(2), 1999, pp. 433-436
Effects of thermal processes after silicidation on the performance of TiSi2/polysilicon gate device
Authors: Jang, SA Kim, TK Yeo, IS Kim, HS Lee, SK
Citation: Sa. Jang et al., Effects of thermal processes after silicidation on the performance of TiSi2/polysilicon gate device, IEEE DEVICE, 46(12), 1999, pp. 2353-2356
Junction leakage characteristics in modified LOGOS isolation structures with a nitride spacer
Authors: Jang, SA Yeo, IS Kim, YB
Citation: Sa. Jang et al., Junction leakage characteristics in modified LOGOS isolation structures with a nitride spacer, IEEE DEVICE, 46(1), 1999, pp. 145-150
Oxidation behavior of nitrogen implanted dichlorosilane-based W-polycide gate
Authors: Kim, HS Yeo, IS Lee, SM Lee, SD Lee, SK
Citation: Hs. Kim et al., Oxidation behavior of nitrogen implanted dichlorosilane-based W-polycide gate, J ELCHEM SO, 146(12), 1999, pp. 4630-4633
Risultati: 1-25 | 26-29