Citation: Wh. Lee et al., A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature, DIAM RELAT, 10(11), 2001, pp. 2075-2083
Citation: Jc. Hu et al., Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications, J VAC SCI A, 18(4), 2000, pp. 1207-1210
Citation: Hl. Hsiao et al., Study on low temperature facetting growth of polycrystalline silicon thin films by ECR downstream plasma CVD with different hydrogen dilution, APPL SURF S, 142(1-4), 1999, pp. 316-321