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Results: 1-20 |
Results: 20
Signal formation of image-edge motion based on biological retinal networksand implementation into an analog metal-oxide-silicon circuit
Authors: Yamada, H Miyashita, T Ohtani, M Nishio, K Yonezu, H Furukawa, Y
Citation: H. Yamada et al., Signal formation of image-edge motion based on biological retinal networksand implementation into an analog metal-oxide-silicon circuit, OPT REV, 8(5), 2001, pp. 336-342
Overview of LHD experiments
Authors: Fujiwara, M Kawahata, K Ohyabu, N Kaneko, O Komori, A Yamada, H Ashikawa, N Baylor, LR Combs, SK deVries, PC Emoto, M Ejiri, A Fisher, PW Funaba, H Goto, M Hartmann, D Ida, K Idei, H Iio, S Ikeda, K Inagaki, S Inoue, N Isobe, T Kado, S Khlopenkov, K Kobuchi, T Krasilnikov, AV Kubo, S Kumazawa, R Leuterer, F Liang, Y Lyon, JF Masuzaki, S Minami, T Miyajima, J Morisaki, T Morita, S Murakami, S Muto, S Mutoh, T Nagayama, Y Nakajima, N Nakamura, Y Nakanishi, H Narihara, K Nishimura, K Noda, N Notake, T Ohdachi, S Oka, Y Okajima, S Okamoto, M Osakabe, M Ozaki, T Pavlichenko, RO Peterson, BJ Sagara, A Saito, K Sakakibara, S Sakamoto, R Sanuki, H Sasao, H Sasao, M Sato, K Sato, M Seki, T Shimozuma, T Shoji, M Sugama, H Suzuki, H Takechi, M Takeiri, Y Tamura, N Tanaka, K Toi, K Tokuzawa, T Torii, Y Tsumori, K Watanabe, KY Watanabe, T Watari, T Yamada, I Yamaguchi, S Yamamoto, S Yokoyama, M Yoshida, N Yoshimura, Y Zhao, YP Akiyama, R Haba, K Iima, M Kodaira, J Takita, T Tsuzuki, T Yamauchi, K Yonezu, H Chikaraishi, H Hamaguchi, S Imagawa, S Inoue, N Iwamoto, A Kitagawa, S Kubota, Y Maekawa, R Mito, T Murai, K Nishimura, A Chikaraishi, H Takahata, K Tamura, H Yamada, S Yanagi, N Itoh, K Matsuoka, K Ohkubo, K Ohtake, I Satoh, S Satow, T Sudo, S Tanahashi, S Yamazaki, K Hamada, Y Motojima, O
Citation: M. Fujiwara et al., Overview of LHD experiments, NUCL FUSION, 41(10), 2001, pp. 1355-1367
Control of growth process and dislocation generation of GaAs1-xNx grown byall-solid-source molecular beam epitaxy
Authors: Fujimoto, Y Yonezu, H Momose, K Utsumi, A Furukawa, Y
Citation: Y. Fujimoto et al., Control of growth process and dislocation generation of GaAs1-xNx grown byall-solid-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 491-495
Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates
Authors: Mendez-Garcia, VH Lopez-Lopez, M Lastras-Martinez, A Vidal, MA Luyo-Alvarado, J Melendez-Lira, M Momose, K Yonezu, H
Citation: Vh. Mendez-garcia et al., Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates, J CRYST GR, 227, 2001, pp. 639-644
Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate
Authors: Fujimoto, Y Yonezu, H Utsumi, A Momose, K Furukawa, Y
Citation: Y. Fujimoto et al., Dislocation-free GaAsyP1-x-yNx/GaP0.98N0.02 quantum-well structure lattice-matched to a Si substrate, APPL PHYS L, 79(9), 2001, pp. 1306-1308
Lattice-relaxation process of (InAs)(m)(GaAs)(n) strained short-period superlattices grown on GaAs
Authors: Samonji, K Yonezu, H Ohshima, N
Citation: K. Samonji et al., Lattice-relaxation process of (InAs)(m)(GaAs)(n) strained short-period superlattices grown on GaAs, JPN J A P 1, 39(5A), 2000, pp. 2503-2507
Analog metal-oxide-silicon IC implementation of motion-detection network based on a biological correlation model
Authors: Ohtani, M Yonezu, H Asai, T
Citation: M. Ohtani et al., Analog metal-oxide-silicon IC implementation of motion-detection network based on a biological correlation model, JPN J A P 1, 39(3A), 2000, pp. 1160-1164
Instrument for lateral release in temporomandibular joint hypomobility
Authors: Kino, K Shibuya, T Yoshitake, H Amagasa, T Yonezu, H Sugisaki, M
Citation: K. Kino et al., Instrument for lateral release in temporomandibular joint hypomobility, ORAL SURG O, 89(4), 2000, pp. 398-401
Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates
Authors: Lopez-Lopez, M Mendez-Garcia, VH Melendez-Lira, M Luyo-Alvarado, J Tamura, M Momose, K Yonezu, H
Citation: M. Lopez-lopez et al., Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates, PHYS ST S-B, 220(1), 2000, pp. 99-109
Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment
Authors: Mendez-Garcia, VH Centeno, AP Lopez-Lopez, M Tamura, M Momose, K Ojima, K Yonezu, H
Citation: Vh. Mendez-garcia et al., Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment, THIN SOL FI, 373(1-2), 2000, pp. 33-36
Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers
Authors: Luyo-Alvarado, J Santana-Aranda, MA Melendez-Lira, M Lopez-Lopez, M Mendez, VH Vidal, MA Yonezu, H
Citation: J. Luyo-alvarado et al., Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers, THIN SOL FI, 373(1-2), 2000, pp. 37-40
Progress summary of LHD engineering design and construction
Authors: Motojima, O Akaishi, K Chikaraishi, H Funaba, H Hamaguchi, S Imagawa, S Inagaki, S Inoue, I Iwamoto, A Kitagawa, S Komori, A Kubota, Y Maekawa, R Masuzaki, S Mito, T Miyazawa, J Morisaki, T Murai, K Muroga, T Nagasaka, T Nakamura, Y Nishimura, A Nishimura, K Noda, N Ohyabu, N Sagara, A Sakakibara, S Sakamoto, R Satoh, S Satow, T Shoji, M Suzuki, H Takahata, K Tamura, H Watanabe, KY Yamada, H Yamada, S Yamaguchi, S Yamazaki, K Yanagi, N Baba, T Hayashi, H Iima, M Inoue, T Kato, S Kato, T Kondo, T Moriuchi, S Ogawa, H Ohtake, I Ooba, K Sekiguchi, H Suzuki, N Takami, S Taniguchi, Y Tsuzuki, T Yamamoto, N Yasui, E Yonezu, H Fujiwara, M Iiyoshi, A
Citation: O. Motojima et al., Progress summary of LHD engineering design and construction, NUCL FUSION, 40(3Y), 2000, pp. 599-609
Analog MOS circuits for motion detection based on correlation neural networks
Authors: Asai, T Ohtani, M Yonezu, H
Citation: T. Asai et al., Analog MOS circuits for motion detection based on correlation neural networks, JPN J A P 1, 38(4B), 1999, pp. 2256-2261
High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations
Authors: Fujimoto, Y Yonezu, H Irino, S Samonji, K Momose, K Ohshima, N
Citation: Y. Fujimoto et al., High-quality GaAsxP1-x/In0.13Ga0.87P quantum well structure grown on Si substrate with a very few threading dislocations, JPN J A P 1, 38(12A), 1999, pp. 6645-6649
Analog integrated circuits for the Lotka-Volterra competitive neural networks
Authors: Asai, T Ohtani, M Yonezu, H
Citation: T. Asai et al., Analog integrated circuits for the Lotka-Volterra competitive neural networks, IEEE NEURAL, 10(5), 1999, pp. 1222-1231
GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer
Authors: Ohshima, N Wakahara, A Ishida, M Yonezu, H Yoshida, A Jung, YC Miura, H
Citation: N. Ohshima et al., GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer, J KOR PHYS, 34, 1999, pp. S359-S363
Overview of the Large Helical Device project
Authors: Iiyoshi, A Komori, A Ejiri, A Emoto, M Funaba, H Goto, M Ida, K Idei, H Inagaki, S Kado, S Kaneko, O Kawahata, K Kobuchi, T Kubo, S Kumazawa, R Masuzaki, S Minami, T Miyazawa, J Morisaki, T Morita, S Murakami, S Muto, S Mutoh, T Nagayama, Y Nakamura, Y Nakanishi, H Narihara, K Nishirnura, K Noda, N Ohdachi, S Ohyabu, N Oka, Y Osakabe, M Ozaki, T Peterson, BJ Sagara, A Sakakibara, S Sakamoto, R Sasao, H Sasao, M Sato, K Sato, M Seki, T Shimozuma, T Shoji, M Suzuki, H Takeiri, Y Tanaka, E Toi, K Tokuzawa, T Tsumori, K Tsuzuki, K Watanabe, KY Watari, T Yamada, H Yamada, I Yamaguchi, S Yokoyama, M Akiyama, R Chikaraishi, H Haba, K Hamaguchi, S Iima, M Imagawa, S Inoue, N Iwamoto, K Kitagawa, S Kodaira, J Kubota, Y Maekawa, R Mito, T Nagasaka, T Nishimura, A Takahashi, C Takahata, K Takita, Y Tamura, H Tsuzuki, T Yamada, S Yamauchi, K Yanagi, N Yonezu, H Hamada, Y Matsuoka, K Murai, K Ohkubo, K Ohtake, I Okamoto, M Satoh, S Satow, T Sudo, S Tanahashi, S Yamazaki, K Fujiwara, M Motojima, O
Citation: A. Iiyoshi et al., Overview of the Large Helical Device project, NUCL FUSION, 39(9Y), 1999, pp. 1245-1256
Plasma confinement studies in LHD
Authors: Fujiwara, M Yamada, H Ejiri, A Emoto, M Funaba, H Goto, M Ida, K Idei, H Inagaki, S Kado, S Kaneko, O Kawahata, K Kobuchi, T Komori, A Kubo, S Kumazawa, R Masuzaki, S Minami, T Miyazawa, J Morisaki, T Morita, S Murakami, S Muto, S Mutoh, T Nagayama, Y Nakamura, Y Nakanishi, H Narihara, K Nishimura, K Noda, N Ohdachi, S Ohyabu, N Oka, Y Osakabe, M Ozaki, T Peterson, BJ Sagara, A Sakakibara, S Sakamoto, R Sasao, H Sasao, M Sato, K Sato, M Seki, T Shimozuma, T Shoji, M Suzuki, H Takeiri, Y Tanaka, K Toi, K Tokuzawa, T Tsumori, K Tsuzuki, K Watanabe, KY Watari, T Yamada, I Yamaguchi, S Yokoyama, M Akiyama, R Chikaraishi, H Haba, K Hamaguchi, S Iima, M Imagawa, S Inoue, N Iwamoto, K Kitagawa, S Kodaira, J Kubota, Y Maekawa, R Mito, T Nagasaka, T Nishimura, A Takahashi, C Takahata, K Takita, Y Tamura, H Tsuzuki, T Yamada, S Yamauchi, K Yanagi, N Yonezu, H Hamada, Y Matsuoka, K Murai, K Ohkubo, K Ohtake, I Okamoto, M Satoh, S Satow, T Sudo, S Tanahashi, S Yamazaki, K Motojima, O Iiyoshi, A
Citation: M. Fujiwara et al., Plasma confinement studies in LHD, NUCL FUSION, 39(11Y), 1999, pp. 1659-1666
Reduction of surface roughness of an AlAs GaAs distributed Bragg reflectorgrown on Si with strained short-period superlattices
Authors: Tsuji, T Yonezu, H Ohshima, N
Citation: T. Tsuji et al., Reduction of surface roughness of an AlAs GaAs distributed Bragg reflectorgrown on Si with strained short-period superlattices, J CRYST GR, 202, 1999, pp. 1010-1014
Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)(m)(GaAs)(n) strained short-period superlattices and InGaAs alloy layers grown on GaAs
Authors: Samonji, K Yonezu, H Takagi, Y Ohshima, N
Citation: K. Samonji et al., Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)(m)(GaAs)(n) strained short-period superlattices and InGaAs alloy layers grown on GaAs, J APPL PHYS, 86(3), 1999, pp. 1331-1339
Risultati: 1-20 |