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Results:
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Results: 1
Authors:
Ohuchi, K
Miyashita, K
Murakoshi, A
Yoshimura, Z
Suguro, K
Toyoshima, Y
Citation: K. Ohuchi et al., Improved Ti self-aligned silicide technology using high dose Ge pre-amorphization for 0.10 mu m CMOS and beyond, JPN J A P 1, 38(4B), 1999, pp. 2238-2242
Risultati:
1-1
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