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Results:
1-7
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Results: 7
Authors:
Turan, R
Aslan, B
Nur, O
Yousif, MYA
Willander, M
Citation: R. Turan et al., Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction, APPL PHYS A, 72(5), 2001, pp. 587-593
Authors:
Yousif, MYA
Willander, M
Lundgren, P
Caymax, M
Citation: Mya. Yousif et al., Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime, SEMIC SCI T, 16(6), 2001, pp. 478-482
Authors:
Yousif, MYA
Nur, O
Willander, M
Patel, CJ
Hernandez, C
Campidelli, Y
Bensahel, D
Kyutt, RN
Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874
Authors:
Yousif, MYA
Nur, O
Willander, M
Citation: Mya. Yousif et al., Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices, SOL ST ELEC, 45(11), 2001, pp. 1931-1937
Authors:
Yousif, MYA
Friesel, M
Willander, M
Lundgren, P
Caymax, M
Citation: Mya. Yousif et al., On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology, SOL ST ELEC, 44(8), 2000, pp. 1425-1429
Authors:
Olah, L
Fenyvesi, A
Jordanova, J
El-Megrab, AM
Majdeddin, AD",Darsono,"Perez, N
Yousif, MYA
Csikai, J
Citation: L. Olah et al., Measurements and calculations of neutron leakage spectra from slabs irradiated with Be-9(d,n)(BH)-B-10-H-2(d,n)He-3 and Pu-Be neutrons, APPL RAD IS, 50(3), 1999, pp. 479-486
Authors:
Yousif, MYA
Chretien, O
Nur, O
Willander, M
Citation: Mya. Yousif et al., Short-channel effects in Si/Si1-xGex retrograde double quantum well p-MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 969-976
Risultati:
1-7
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