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Results: 1-10 |
Results: 10
Hydrogenated amorphous silicon films with significantly improved stability
Authors: Sheng, SR Liao, XB Ma, ZX Yue, GZ Wang, YQ Kong, GL
Citation: Sr. Sheng et al., Hydrogenated amorphous silicon films with significantly improved stability, SOL EN MAT, 68(1), 2001, pp. 123-133
Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD
Authors: Han, DX Yue, GZ Habuchi, H Iwaniczko, E Wang, Q
Citation: Dx. Han et al., Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD, THIN SOL FI, 395(1-2), 2001, pp. 134-137
Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films
Authors: Han, DX Baugh, J Yue, GZ Wang, Q
Citation: Dx. Han et al., Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films, PHYS REV B, 62(11), 2000, pp. 7169-7178
Electro- and photo-luminescence spectra from a-Si : H and a-SiGe p-i-n solar cells
Authors: Yue, GZ Deng, XM Ganguly, G Han, DX
Citation: Gz. Yue et al., Electro- and photo-luminescence spectra from a-Si : H and a-SiGe p-i-n solar cells, J NON-CRYST, 266, 2000, pp. 1119-1123
Optical and electronic properties of microcrystalline silicon deposited byhot-wire chemical vapor deposition
Authors: Han, DX Habuchi, H Hori, T Nishibe, A Namioka, T Lin, J Yue, GZ
Citation: Dx. Han et al., Optical and electronic properties of microcrystalline silicon deposited byhot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 274-278
Characteristics of the low energy photoluminescence in mu c-Si films
Authors: Yue, GZ Han, DX McNeil, LE Wang, Q
Citation: Gz. Yue et al., Characteristics of the low energy photoluminescence in mu c-Si films, J APPL PHYS, 88(8), 2000, pp. 4904-4906
Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity
Authors: Han, DX Yue, GZ Lorentzen, JD Lin, J Habuchi, H Wang, Q
Citation: Dx. Han et al., Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity, J APPL PHYS, 87(4), 2000, pp. 1882-1888
Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy
Authors: Yue, GZ Han, DX Williamson, DL Yang, J Lord, K Guha, S
Citation: Gz. Yue et al., Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy, APPL PHYS L, 77(20), 2000, pp. 3185-3187
A combinatorial study of materials in transition from amorphous to microcrystalline silicon
Authors: Wang, Q Yue, GZ Li, J Han, DX
Citation: Q. Wang et al., A combinatorial study of materials in transition from amorphous to microcrystalline silicon, SOL ST COMM, 113(3), 1999, pp. 175-178
Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon
Authors: Yue, GZ Lorentzen, JD Lin, J Han, DX Wang, Q
Citation: Gz. Yue et al., Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon, APPL PHYS L, 75(4), 1999, pp. 492-494
Risultati: 1-10 |