Authors:
Kudryashov, VE
Mamakin, SS
Turkin, AN
Yunovich, AE
Kovalev, AN
Manyakhin, FI
Citation: Ve. Kudryashov et al., Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence, SEMICONDUCT, 35(7), 2001, pp. 827-834
Authors:
Alferov, ZI
Bagaev, VS
Volkov, BA
Gippius, AA
Golovashkin, AI
Grishechkina, SP
Demeshina, AI
Zasavitskii, II
Isakov, AI
Keldysh, LV
Kopaev, YV
Kopylovskii, BD
Krokhin, ON
Nadezhdinskii, AI
Neizvestnyi, IG
Penin, NA
Popov, YM
Sibel'din, NN
Stafeev, VI
Chuenkov, VA
Shestakov, VV
Yunovich, AE
Citation: Zi. Alferov et al., In memory of Aleksei Petrovich Shotov (1927-2001), SEMICONDUCT, 35(11), 2001, pp. 1345-1346
Citation: Ae. Yunovich et Ve. Kudryashov, Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN heterostructures with quantum wells, PHYS ST S-B, 228(1), 2001, pp. 141-145
Authors:
Kudryashov, VE
Mamakin, SS
Turkin, AN
Yunovich, AE
Kovalev, AN
Manyakhin, FI
Citation: Ve. Kudryashov et al., Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes, MRS I J N S, 5, 2000, pp. NIL_574-NIL_579
Citation: Ve. Kudryashov et al., Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes, TECH PHYS L, 25(7), 1999, pp. 536-537
Authors:
Kudryashov, VE
Turkin, AN
Yunovich, AE
Kovalev, AN
Manyakhin, FI
Citation: Ve. Kudryashov et al., Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells, SEMICONDUCT, 33(4), 1999, pp. 429-434
Authors:
Kovalev, AN
Manyakhin, FI
Kudryashov, VE
Turkin, AN
Yunovich, AE
Citation: An. Kovalev et al., Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation, SEMICONDUCT, 33(2), 1999, pp. 192-199
Authors:
Yunovich, AE
Kudryashov, VE
Mamakin, SS
Turkin, AN
Kovalev, AN
Manyakhin, FI
Citation: Ae. Yunovich et al., Spectra and quantum efficiency of light-emitting diodes based on GaN heterostructures with quantum wells, PHYS ST S-A, 176(1), 1999, pp. 125-130
Authors:
Schwegler, V
Schad, SS
Kirchner, C
Seyboth, M
Kamp, M
Ebeling, KJ
Kudryashov, VE
Turkin, AN
Yunovich, AE
Stempfle, U
Link, A
Limmer, W
Sauer, R
Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786