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Results: 1-16 |
Results: 16

Authors: ALEKSEENKO MV ZABRODSKII AG SHTERENGAS LM
Citation: Mv. Alekseenko et al., CONTRIBUTION OF LIGHT HOLES TO THE HALL-EFFECT FOR THE COMPLEX VALENCE-BAND IN GERMANIUM AND ITS DEPENDENCE ON DOPING LEVEL, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 720-728

Authors: VEINGER AI ZABRODSKII AG TISNEK TV BISKUPSKI G
Citation: Ai. Veinger et al., DISTINCTIVE FEATURES OF THE MAGNETORESISTANCE OF DEGENERATELY DOPED N-INAS AND THEIR INFLUENCE ON MAGNETIC-FIELD-DEPENDENT MICROWAVE-ABSORPTION, Semiconductors, 32(5), 1998, pp. 497-503

Authors: ZABRODSKII AG ANDREEV AG EGOROV SV
Citation: Ag. Zabrodskii et al., COULOMB GAP AND THE METAL-INSULATOR-TRANSITION, Physica status solidi. b, Basic research, 205(1), 1998, pp. 61-68

Authors: ANDREEV AG ZABRODSKII AG EGOROV SV ZVYAGIN IP
Citation: Ag. Andreev et al., THERMOPOWER OF NEUTRON TRANSMUTATION-DOPED GE-GA IN THE HOPPING REGION, Physica status solidi. b, Basic research, 205(1), 1998, pp. 381-384

Authors: ZABRODSKII AG
Citation: Ag. Zabrodskii, COULOMB GAP AND INSULATOR-METAL TRANSITIONS IN DOPED SEMICONDUCTORS, Uspehi fiziceskih nauk, 168(7), 1998, pp. 804-808

Authors: VEINGER AI ZABRODSKII AG TISNEK TV BISKUPSKI G
Citation: Ai. Veinger et al., PECULIARITIES OF THE QUANTUM MAGNETORESISTANCE EFFECTS IN A HEAVILY-DOPED SEMICONDUCTOR AT THE MICROWAVE-FREQUENCIES, Solid state communications, 106(7), 1998, pp. 401-404

Authors: ANDREEV AG ZABRODSKII AG EGOROV SV ZVYAGIN IP
Citation: Ag. Andreev et al., THERMOPOWER OF TRANSMUTATION-DOPED GE-GA IN THE REGION FOR HOPPING CONDUCTIVITY, Semiconductors, 31(10), 1997, pp. 1008-1013

Authors: VEINGER AI ZABRODSKII AG TISNEK TV SHCHAVELEV KO SHCHAVELEV OS
Citation: Ai. Veinger et al., DETECTION OF ANTIFERROMAGNETIC PHASE IN G LASSES, ALLOYED BY TRANSITION-METAL OXIDES BY ITS MAGNET-DEPENDENT MICROWAVE-ABSORPTION, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 50-55

Authors: ZABRODSKII AG
Citation: Ag. Zabrodskii, COULOMB GAP, ITS CRITICAL-BEHAVIOR, AND THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS, Czechoslovak journal of Physics, 46, 1996, pp. 2455-2456

Authors: ANDREEV AG VORONKOV VV VORONKOVA GI PETROVA EA ZABRODSKII AG
Citation: Ag. Andreev et al., EFFECT OF THE COULOMB INTERACTION ON THE THERMAL IONIZATION-ENERGY OFTHE DOMINANT IMPURITY IN COMPENSATED GE-GA, Semiconductors, 29(12), 1995, pp. 1162-1169

Authors: VEINGER AI ZABRODSKII AG TISNEK TV
Citation: Ai. Veinger et al., USE OF MAGNETOSENSITIVE MICROWAVE-ABSORPTION IN A SEARCH FOR NEW SUPERCONDUCTING PHASES, Superconductor science and technology, 8(5), 1995, pp. 368-373

Authors: ZABRODSKII AG ALEKSEENKO MV
Citation: Ag. Zabrodskii et Mv. Alekseenko, EFFECT OF THE SPECTRUM OF FISSION-REACTOR NEUTRONS ON THE KINETICS OFNEUTRON TRANSMUTATION DOPING AND ON THE DOPANT YIELD IN GERMANIUM, Semiconductors, 28(1), 1994, pp. 101-104

Authors: VEINGER AI ZABRODSKII AG KRASIKOV LA MOROZOVA LV
Citation: Ai. Veinger et al., COMPOSITES BASED ON RUBBER-LIKE POLYMERS AND SUPERCONDUCTING YBACU CERAMICS, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 55-60

Authors: ZABRODSKII AG ANDREEV AG
Citation: Ag. Zabrodskii et Ag. Andreev, THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM, International journal of modern physics b, 8(7), 1994, pp. 883-889

Authors: ZABRODSKII AG ALEKSEENKO MV
Citation: Ag. Zabrodskii et Mv. Alekseenko, THE KINETICS OF NEUTRON-TRANSMISSION DOPING OF GERMANIUM - CHARACTERIZATION OF THE MATERIAL AND DETERMINATION OF THE NUCLEAR PHYSICAL CONSTANTS, Semiconductors, 27(11-12), 1993, pp. 1116-1127

Authors: ZABRODSKII AG ANDREEV AG
Citation: Ag. Zabrodskii et Ag. Andreev, ANOMALOUSLY NARROW COULOMB GAP, JETP letters, 58(10), 1993, pp. 756-761
Risultati: 1-16 |