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Results: 1-25/34
Authors:
SAKATA K
TACHIBANA A
ZAIMA S
YASUDA Y
Citation: K. Sakata et al., QUANTUM-CHEMICAL STUDY OF THE OXIDATION SITES IN HYDROGEN-TERMINNATEDAND WATER-TERMINATED SI DIMERS - ATTEMPT TO UNDERSTAND THE SI-SI BACK-BOND OXIDATION ON THE SI SURFACE, JPN J A P 1, 37(9A), 1998, pp. 4962-4973
Authors:
ZAIMA S
YASUDA Y
Citation: S. Zaima et Y. Yasuda, STUDY OF REACTION AND ELECTRICAL-PROPERTIES AT TI SIGE/SI(100) CONTACTS FOR ULTRALARGE SCALE INTEGRATED APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2623-2628
Authors:
IWANO H
ZAIMA S
YASUDA Y
Citation: H. Iwano et al., HOPPING CONDUCTION AND LOCALIZED STATES IN P-SI WIRES FORMED BY FOCUSED ION-BEAM IMPLANTATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2551-2554
Authors:
NAKAGAWA Y
HIGASHI M
IKEDA H
ZAIMA S
YASUDA Y
Citation: Y. Nakagawa et al., LOCAL BONDING STRUCTURES OF SIO2-FILMS ON H-TERMINATED SI(100) SURFACES STUDIED BY USING HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied surface science, 132, 1998, pp. 192-196
Authors:
MUTO A
OKADA M
IKEDA H
ZAIMA S
YASUDA Y
Citation: A. Muto et al., EFFECTS OF H-TERMINATION ON GE FILM GROWTH ON SI(111) SURFACES BY SOLID-PHASE EPITAXY, Applied surface science, 132, 1998, pp. 321-326
Authors:
IWANO H
YOSHIKAWA K
ZAIMA S
YASUDA Y
Citation: H. Iwano et al., SURFACE-ROUGHNESS OF STRAIN-RELAXED SI1-XGEX LAYERS GROWN BY 2-STEP GROWTH METHOD, Thin solid films, 317(1-2), 1998, pp. 17-20
Authors:
YASUDA Y
MATSUYAMA T
SATO K
KONDO M
IKEDA H
ZAIMA S
Citation: Y. Yasuda et al., EFFECTS OF ATOMIC-HYDROGEN ON GROWTH-BEHAVIOR OF SI FILMS BY SI2H6-SOURCE MOLECULAR-BEAM EPITAXY, Thin solid films, 317(1-2), 1998, pp. 48-51
Authors:
OKADA M
MUTO A
IKEDA H
ZAIMA S
YASUDA Y
Citation: M. Okada et al., NUCLEATION AND GROWTH OF GE ON SI(111) BY MBE WITH ADDITIONAL ATOMIC-HYDROGEN IRRADIATION STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of crystal growth, 188(1-4), 1998, pp. 119-124
Authors:
KONDO H
IWANO H
NAKATSUKA O
KAGA K
ZAIMA S
YASUDA Y
Citation: H. Kondo et al., CONDUCTANCE OSCILLATIONS IN HOPPING CONDUCTION SYSTEMS FABRICATED BY FOCUSED ION-BEAM IMPLANTATION, JPN J A P 1, 36(6B), 1997, pp. 4046-4048
Authors:
OKADA M
KONDO M
IKEDA H
ZAIMA S
YASUDA Y
Citation: M. Okada et al., HYDROGEN EFFECTS ON SI1-XGEX SI HETEROEPITAXIAL GROWTH BY SI2H6-SOURCE AND GEH4-SOURCE MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 36(12B), 1997, pp. 7665-7668
Authors:
IKEDA H
NAKAGAWA Y
TOSHIMA M
FURUTA S
ZAIMA S
YASUDA Y
Citation: H. Ikeda et al., INITIAL OXIDATION OF H-TERMINATED SI(111) SURFACES STUDIED BY HREELS, Applied surface science, 117, 1997, pp. 109-113
Authors:
OHMORI K
IKEDA H
IWANO H
ZAIMA S
YASUDA Y
Citation: K. Ohmori et al., INITIAL OXIDATION OF SI(100)-(2X1)H MONOHYDRIDE SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY SCANNING TUNNELING SPECTROSCOPY, Applied surface science, 117, 1997, pp. 114-118
Authors:
IKEGAMI H
IKEDA H
ZAIMA S
YASUDA Y
Citation: H. Ikegami et al., THERMAL-STABILITY OF ULTRA-THIN COSI2 FILMS ON SI(100)-2X1 SURFACES, Applied surface science, 117, 1997, pp. 275-279
Authors:
KOJIMA J
ZAIMA S
SHINODA H
IWANO H
IKEDA H
YASUDA Y
Citation: J. Kojima et al., INTERFACIAL REACTIONS AND ELECTRICAL CHARACTERISTICS IN TI SIGE/SI(100) CONTACT SYSTEMS/, Applied surface science, 117, 1997, pp. 317-320
Authors:
OKADA M
SHIMIZU T
IKEDA H
ZAIMA S
YASUDA Y
Citation: M. Okada et al., THE INFLUENCE OF ADDITIONAL ATOMIC-HYDROGEN ON THE MONOLAYER GROWTH OF GE ON SI(100) STUDIED BY STM, Applied surface science, 114, 1997, pp. 349-353
Authors:
YASUDA Y
IKEDA H
ZAIMA S
Citation: Y. Yasuda et al., EFFECTS OF H-TERMINATION ON INITIAL OXIDATION PROCESS, Applied surface science, 114, 1997, pp. 579-584
Authors:
IKEDA H
HOTTA K
FURUTA S
ZAIMA S
YASUDA Y
Citation: H. Ikeda et al., INITIAL OXIDATION PROCESSES OF H-TERMINATED SI(100) SURFACES STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, JPN J A P 1, 35(2B), 1996, pp. 1069-1072
Authors:
IKEGAMI H
OHMORI K
IKEDA H
IWANO H
ZAIMA S
YASUDA Y
Citation: H. Ikegami et al., OXIDE FORMATION ON SI(100)-2X1 SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY SCANNING TUNNELING SPECTROSCOPY, JPN J A P 1, 35(2B), 1996, pp. 1593-1597
Authors:
IKEDA H
HOTTA K
FURUTA S
ZAIMA S
YASUDA Y
Citation: H. Ikeda et al., INFLUENCES OF HYDROGEN ON INITIAL OXIDATION PROCESSES OF H-TERMINATEDSI(100) SURFACES, Applied surface science, 104, 1996, pp. 354-358
Authors:
IKEDA H
YAMADA T
HOTTA K
ZAIMA S
YASUDA Y
Citation: H. Ikeda et al., INITIAL OXIDATION OF SI(311) SURFACES STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied surface science, 101, 1996, pp. 431-435
Authors:
IWANO H
YOSHIKAWA K
KOJIMA A
HAYASHI K
ZAIMA S
YASUDA Y
Citation: H. Iwano et al., NOVEL METHOD OF STRAIN-RELAXED SI1-XGEX GROWTH ON SI(100) BY MBE, Applied surface science, 101, 1996, pp. 487-490
Authors:
SHINODA H
KOSAKA M
KOJIMA J
IKEDA H
ZAIMA S
YASUDA Y
Citation: H. Shinoda et al., ELECTRICAL-PROPERTIES OF METAL SI1-XGEX/SI(100) HETEROJUNCTIONS/, Applied surface science, 101, 1996, pp. 526-529
Authors:
ZAIMA S
YASUDA Y
Citation: S. Zaima et Y. Yasuda, STUDIES ON THE SUPPRESSION OF GE SEGREGATION DURING SI OVERGROWTH ON GE(NML) SI(100) SUBSTRATES BY GAS-SOURCE MBE/, Journal of crystal growth, 163(1-2), 1996, pp. 105-112
Authors:
IKEDA H
HOTTA K
YAMADA T
ZAIMA S
YASUDA Y
Citation: H. Ikeda et al., STUDIES ON REACTION PROCESSES OF HYDROGEN AND OXYGEN-ATOMS WITH H2O-ADSORBED SI(100) SURFACES BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, JPN J A P 1, 34(4B), 1995, pp. 2191-2195
Authors:
ZAIMA S
KOJIMA J
HAYASHI M
IKEDA H
IWANO H
YASUDA Y
Citation: S. Zaima et al., IMPROVEMENTS OF ELECTRICAL CHARACTERISTICS OF HF P-SI(100) INTERFACESBY H-TERMINATION/, JPN J A P 1, 34(2B), 1995, pp. 741-745