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Citation: Sa. Gavrilov et al., THE CHANGE IN THE MECHANISM OF THE POROUS SILICON FORMATION DURING ANODIC POLARIZATION, Russian journal of electrochemistry, 33(9), 1997, pp. 985-989

Authors: ALESHCHENKO YA ZAVARITSKAYA TN KAPAEV VV KOPAEV YV MELNIK NN

Citation: Ya. Aleshchenko et al., PHOTOLUMINESCENCE WITH MODERATE EXCITATION AND RESONANT RAMAN-SCATTERING IN GAAS ALGAAS SUPERLATTICES/, Semiconductors, 30(5), 1996, pp. 436-439

Authors: ALESHCHENKO YA ZAVARITSKAYA TN KAPAEV VV KOPAEV YV MELNIK NN

Citation: Ya. Aleshchenko et al., RESONANT RAMAN-SCATTERING AND REDISLOCATION EFFECTS IN GAAS ALGAAS/, JETP letters, 59(4), 1994, pp. 255-259