Authors:
HUANG MQ
LAI PT
XU JP
ZENG SH
LI GQ
CHENG YC
Citation: Mq. Huang et al., SUPPRESSION OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY BACKSURFACE ARGON BOMBARDMENT, Microelectronics and reliability, 38(9), 1998, pp. 1407-1411
Citation: Gq. Li et al., PHOTOSENSITIVITY, THERMAL AND HUMIDITY SENSITIVITY CHARACTERISTICS OFSR1-XLAXTIO3 FILM ON SIO2 SI SUBSTRATE/, Sensors and actuators. A, Physical, 63(3), 1997, pp. 223-226
Citation: Pt. Lai et al., INFLUENCE OF BACKSURFACE ARGON BOMBARDMENT ON SIO2-SI INTERFACE CHARACTERISTICS, Applied physics letters, 68(19), 1996, pp. 2687-2689
Citation: Gq. Li et al., EFFECTS OF CHEMICAL-COMPOSITION ON HUMIDITY SENSITIVITY OF AL BATIO3/SI STRUCTURE/, Applied physics letters, 66(18), 1995, pp. 2436-2438