Authors: HUANG CK ZHANG WE YANG CH

Citation: Ck. Huang et al., 2-DIMENSIONAL NUMERICAL-SIMULATION OF SCHOTTKY-BARRIER MOSFET WITH CHANNEL-LENGTH TO 10 NM, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 842-848

Authors: ZHANG WE WANG FC YANG CH YANG MJ

Citation: We. Zhang et al., THE ULTIMATE SCALING LIMIT OF SEMICONDUCTOR-BASED TRANSISTORS, Superlattices and microstructures, 22(3), 1997, pp. 417-420

Authors: WANG FC ZHANG WE YANG CH YANG MJ BENNETT BR WILSON RA STONE DR

Citation: Fc. Wang et al., A TUNNELING FIELD-EFFECT TRANSISTOR WITH 25 NM METALLURGICAL CHANNEL-LENGTH, Applied physics letters, 70(22), 1997, pp. 3005-3007

Authors: ZHANG WE WANG FC YANG CH

Citation: We. Zhang et al., DESIGN AND MODELING OF A NEW SILICON-BASED TUNNELING FIELD-EFFECT TRANSISTOR, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1441-1447

Authors: WANG FC ZHANG WE YANG CH YANG MJ BENNETT BR

Citation: Fc. Wang et al., OBSERVATION OF ELECTRICALLY RESETTABLE NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN INAS ALSB SINGLE QUANTUM-WELLS/, Applied physics letters, 69(10), 1996, pp. 1417-1419