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Results:
1-8
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Results: 8
Authors:
ZHITINSKAYA MK
NEMOV SA
SVECHNIKOVA TE
Citation: Mk. Zhitinskaya et al., SPECIFIC FEATURES OF BI2TE3 DOPING WITH SN, Physics of the solid state, 40(8), 1998, pp. 1297-1300
Authors:
NEMOV SA
ZHITINSKAYA MK
PARFENEV RV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF LOW-LEVEL GE ADDITIONS ON THE SUPERCONDUCTING TRANSITION INPBTE-TL, Physics of the solid state, 40(7), 1998, pp. 1096-1097
Authors:
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
Citation: Mk. Zhitinskaya et al., EFFECT OF PHONON-SCATTERING FROM NEUTRAL AND CHARGED IMPURITY CENTERSON THE LATTICE HEAT-CONDUCTIVITY OF PBTE(TL, NA), Physics of the solid state, 40(7), 1998, pp. 1098-1100
Authors:
ZHITINSKAYA MK
NEMOV SA
SVECHNIKOVA TE
Citation: Mk. Zhitinskaya et al., EFFECT OF INHOMOGENEITIES OF BI2T3 CRYSTALS ON THE TRANSVERSE NERNST-ETTINGSHAUSEN EFFECT, Semiconductors, 31(4), 1997, pp. 375-377
Authors:
NEMOV SA
NASREDINOV FS
PARFENEV RV
ZHITINSKAYA MK
CHERNYAEV AV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF SN IMPURITIES ON ELECTROPHYSICA L PROPERTIES AND SUPERCONDUCTING TRANSITIONS IN (PBTE)(0.95)(PBS)(0.05)TL, Fizika tverdogo tela, 38(2), 1996, pp. 550-557
Authors:
ABAIDULINA TG
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
Citation: Tg. Abaidulina et al., EXPERIMENTAL-STUDY OF THE INTRINSIC DEFECTS IN DOPED BISMUTH TELLURIDE BY ELECTRICAL METHODS, Semiconductors, 28(9), 1994, pp. 899-900
Authors:
NEMOV SA
RAVICH YI
BEREZIN AV
GASUMYANTS VE
ZHITINSKAYA MK
PROSHIN VI
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS, Semiconductors, 27(2), 1993, pp. 165-168
Authors:
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
ABAIDULINA TG
KOMPANEETS VV
BUSHMARINA GS
DRABKIN IA
Citation: Mk. Zhitinskaya et al., ELECTROPHYSICAL PROPERTIES OF INDIUM-DOPED BISMUTH TELLURIDE, Semiconductors, 27(10), 1993, pp. 952-954
Risultati:
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