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Results: 1-8 |
Results: 8
ATOM DIFFUSION DURING MBE GROWTH ON PATTERNED SUBSTRATE
Authors: JIAN J ZHOU JX ZHONG ZT CHUA SJ
Citation: J. Jian et al., ATOM DIFFUSION DURING MBE GROWTH ON PATTERNED SUBSTRATE, Microelectronic engineering, 43-4, 1998, pp. 409-414
INTRASUBBAND AND INTERSUBBAND TRANSITIONS IN LIGHTLY AND HEAVILY-DOPED GAAS ALGA1-XAS MULTIPLE-QUANTUM WELLS/
Authors: ZHU QS WANG XB ZHONG ZT ZHOU XC HE YP CAO ZP ZHANG GZ XIAO J SUN XH YANG HZ DU QG
Citation: Qs. Zhu et al., INTRASUBBAND AND INTERSUBBAND TRANSITIONS IN LIGHTLY AND HEAVILY-DOPED GAAS ALGA1-XAS MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 57(19), 1998, pp. 12388-12396
LINEWIDTH OF THE INFRARED-ABSORPTION SPECTRA DUE TO BOUND-TO-CONTINUUM TRANSITION IN GAAS ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: HE YP ZHU QS ZHONG ZT ZHANG GZ XIAO J CAO ZP SUN XH YANG HZ
Citation: Yp. He et al., LINEWIDTH OF THE INFRARED-ABSORPTION SPECTRA DUE TO BOUND-TO-CONTINUUM TRANSITION IN GAAS ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 73(8), 1998, pp. 1131-1133
INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: ZHU QS WANG XB DU QG ZHONG ZT XING YR
Citation: Qs. Zhu et al., INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Physical review. B, Condensed matter, 52(3), 1995, pp. 1848-1851
DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: ZHU QS GU ZQ ZHONG ZT ZHOU ZQ LU LW
Citation: Qs. Zhu et al., DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Applied physics letters, 67(24), 1995, pp. 3593-3595
DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OFDELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: ZHU QS ZHONG ZT LU LW LI CF
Citation: Qs. Zhu et al., DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OFDELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 65(19), 1994, pp. 2425-2427
A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIALSTEPS AT IN0.2GA0.8AS GAAS INTERFACE/
Authors: JIANG J ZHOU XC DU AY PENG LM WANG E MU SM ZHONG ZT
Citation: J. Jiang et al., A REM STUDY OF INHOMOGENEOUS STRESS-FIELDS INDUCED BY THE INTERFACIALSTEPS AT IN0.2GA0.8AS GAAS INTERFACE/, Superlattices and microstructures, 13(3), 1993, pp. 379-382
DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: ZHU QS MOU SM ZHOU XC ZHONG ZT
Citation: Qs. Zhu et al., DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 62(22), 1993, pp. 2813-2814
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