AAAAAA

   
Results: 1-25 | 26-26 |
Results: 26-26/26
EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P-IMPLANTED SI(100)()
Authors: ZHAO QT WANG ZL XU TB ZHU PR ZHOU JS
Citation: Qt. Zhao et al., EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P-IMPLANTED SI(100)(), Applied physics letters, 62(24), 1993, pp. 3183-3185
Risultati: 1-25 | 26-26 |