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Results: 1-14 |
Results: 14
OBSERVATION OF STRAIN-RELAXATION-INDUCED SIZE EFFECTS IN P-TYPE SI SIGE RESONANT-TUNNELING DIODES/
Authors: LUKEY PW CARO J ZIJLSTRA T VANDERDRIFT E RADELAAR S
Citation: Pw. Lukey et al., OBSERVATION OF STRAIN-RELAXATION-INDUCED SIZE EFFECTS IN P-TYPE SI SIGE RESONANT-TUNNELING DIODES/, Physical review. B, Condensed matter, 57(12), 1998, pp. 7132-7140
INTERACTIVE EFFECTS IN REACTIVE ION ETCHING OF W1-XGEX
Authors: VANDERDRIFT E DINH BQ VERHOEVEN PA FAKKELDIJ EJM ZUIDDAM MR ZIJLSTRA T
Citation: E. Vanderdrift et al., INTERACTIVE EFFECTS IN REACTIVE ION ETCHING OF W1-XGEX, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2676-2681
FABRICATION AND ANALYSIS OF EXTREME-ULTRAVIOLET REFLECTION MASKS WITHPATTERNED W C ABSORBER BILAYERS/
Authors: VOORMA HJ LOUIS E KOSTER NB BIJKERK F ZIJLSTRA T DEGROOT LEM ROUSSEEUW BAC ROMIJN J VANDERDRIFT EWJM FRIEDRICH J
Citation: Hj. Voorma et al., FABRICATION AND ANALYSIS OF EXTREME-ULTRAVIOLET REFLECTION MASKS WITHPATTERNED W C ABSORBER BILAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 293-298
CHEMICAL VS PHYSICAL FACTORS IN DRY-ETCHING INDUCED DAMAGE IN THE SI GEXSI1-X SYSTEM/
Authors: VANVEEN RG TEEPEN MJ VANDERDRIFT E ZIJLSTRA T FAKKELDIJ EJM WERNER K VERBRUGGEN AH RADELAAR S
Citation: Rg. Vanveen et al., CHEMICAL VS PHYSICAL FACTORS IN DRY-ETCHING INDUCED DAMAGE IN THE SI GEXSI1-X SYSTEM/, Microelectronic engineering, 35(1-4), 1997, pp. 55-58
PREPARATION OF NANOMETER-SCALE WINDOWS IN SIO2 FOR SELECTIVE EPITAXIAL-GROWTH OF SI BASED DEVICES
Authors: MAES JWH LUKEY PW ZIJLSTRA T VISSER C CARO J VANDERDRIFT EWJM TICHELAAR FD RADELAAR S
Citation: Jwh. Maes et al., PREPARATION OF NANOMETER-SCALE WINDOWS IN SIO2 FOR SELECTIVE EPITAXIAL-GROWTH OF SI BASED DEVICES, Microelectronic engineering, 35(1-4), 1997, pp. 321-324
A LOW-TEMPERATURE GATE OXIDE PROCESS FOR N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS
Authors: BOZON B ZIJLSTRA T GLUCK M HERSENER J VANDERDRIFT E KONIG U
Citation: B. Bozon et al., A LOW-TEMPERATURE GATE OXIDE PROCESS FOR N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of applied physics, 82(9), 1997, pp. 4611-4615
NOVEL POSTETCHING TREATMENT OF SMALL WINDOWS IN OXIDE FOR SELECTIVE EPITAXIAL-GROWTH
Authors: MAES JWH CARO J VISSER CCG ZIJLSTRA T VANDERDRIFT EWJM RADELAAR S TICHELAAR FD FAKKELDIJ EJM
Citation: Jwh. Maes et al., NOVEL POSTETCHING TREATMENT OF SMALL WINDOWS IN OXIDE FOR SELECTIVE EPITAXIAL-GROWTH, Applied physics letters, 70(8), 1997, pp. 973-975
DRY-ETCHING AND INDUCED DAMAGE
Authors: VANDERDRIFT E CHEUNG R ZIJLSTRA T
Citation: E. Vanderdrift et al., DRY-ETCHING AND INDUCED DAMAGE, Microelectronic engineering, 32(1-4), 1996, pp. 241-253
EXTREME UV LITHOGRAPHY - A NEW LASER-PLASMA TARGET CONCEPT AND FABRICATION OF MULTILAYER REFLECTION MASKS
Authors: BIJKERK F SHMAENOK LA LOUIS E VOORMA HJ KOSTER NB BRUINEMAN C BASTIAENSEN RKFJ VANDERDRIFT EWJM ROMIJN J DEGROOT LEM ROUSSEEUW BAC ZIJLSTRA T PLATONOV YY SALASHCHENKO NN
Citation: F. Bijkerk et al., EXTREME UV LITHOGRAPHY - A NEW LASER-PLASMA TARGET CONCEPT AND FABRICATION OF MULTILAYER REFLECTION MASKS, Microelectronic engineering, 30(1-4), 1996, pp. 183-186
GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/
Authors: WERNER K STORM A BUTZKE S MAES JW VANROOY M ALKEMADE P ALGRA E SOMERS M DELANGE B VANDERDRIFT E ZIJLSTRA T RADELAAR S
Citation: K. Werner et al., GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/, Journal of crystal growth, 164(1-4), 1996, pp. 223-234
FABRICATION OF SINGLE-CRYSTALLINE ALUMINUM NANOSTRUCTURES
Authors: FORTUIN AW VANDERKOLK M ZIJLSTRA T VERBRUGGEN AH RADELAAR S
Citation: Aw. Fortuin et al., FABRICATION OF SINGLE-CRYSTALLINE ALUMINUM NANOSTRUCTURES, Microelectronic engineering, 27(1-4), 1995, pp. 117-120
XPS STUDY ON DRY-ETCHING OF SI GEXSI1-X
Authors: VANDERDRIFT E ZIJLSTRA T FAKKELDIJ EJM CHEUNG R WERNER K RADELAAR S
Citation: E. Vanderdrift et al., XPS STUDY ON DRY-ETCHING OF SI GEXSI1-X, Microelectronic engineering, 27(1-4), 1995, pp. 481-485
REACTIVE ION ETCHING MECHANISM STUDY ON SI GEXSI1-X/
Authors: VANDERDRIFT E ZIJLSTRA T CHEUNG R WERNER K RADELAAR S
Citation: E. Vanderdrift et al., REACTIVE ION ETCHING MECHANISM STUDY ON SI GEXSI1-X/, Microelectronic engineering, 23(1-4), 1994, pp. 343-348
HIGH-RESOLUTION REACTIVE ION ETCHING AND DAMAGE EFFECTS IN THE SI GEXSI1-X SYSTEM/
Authors: CHEUNG R ZIJLSTRA T VANDERDRIFT E GEERLIGS LJ VERBRUGGEN AH WERNER K RADELAAR S
Citation: R. Cheung et al., HIGH-RESOLUTION REACTIVE ION ETCHING AND DAMAGE EFFECTS IN THE SI GEXSI1-X SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2224-2228
Risultati: 1-14 |