EXTREME UV LITHOGRAPHY - A NEW LASER-PLASMA TARGET CONCEPT AND FABRICATION OF MULTILAYER REFLECTION MASKS

Results are reported on the development of a laser plasma source and t he fabrication of multilayer reflection masks for extreme ultra-violet lithography (EUVL). A new concept of a target for a laser plasma sour ce is presented including experimental evidence of elimination of macr o debris particles from the source. Concerning the fabrication of refl ection masks, a new method is described involving a two-layer absorber system protecting the Mo-Si structure against etching damage.