AAAAAA

   
Results: 1-12 |
Results: 12
INFLUENCE OF SHORT-TERM ANNEALING ON THE CONDUCTIVITY OF POROUS SILICON AND THE TRANSITION RESISTIVITY OF AN ALUMINUM-POROUS SILICON CONTACT
Authors: ZIMIN SP KOMAROV EP
Citation: Sp. Zimin et Ep. Komarov, INFLUENCE OF SHORT-TERM ANNEALING ON THE CONDUCTIVITY OF POROUS SILICON AND THE TRANSITION RESISTIVITY OF AN ALUMINUM-POROUS SILICON CONTACT, Technical physics letters, 24(3), 1998, pp. 226-228
LOW-TEMPERATURE GROWTH OF PBTE FILMS ON POROUS SILICON
Authors: ZIMIN SP ZIMIN DS SAUNIN IV BONDOKOV RT
Citation: Sp. Zimin et al., LOW-TEMPERATURE GROWTH OF PBTE FILMS ON POROUS SILICON, Inorganic materials, 34(5), 1998, pp. 440-441
OXIDE FORMATION IN THIN PBS FILMS UNDER ELECTRON-IRRADIATION
Authors: ZIMIN SP ZAIKINA RF BORZOVA GA
Citation: Sp. Zimin et al., OXIDE FORMATION IN THIN PBS FILMS UNDER ELECTRON-IRRADIATION, Inorganic materials, 34(11), 1998, pp. 1159-1161
CHANGE OF LIGHT HOLES VALENCE-BAND IN LEAD-TIN TELLURIDE FILMS BY ISOVALENT SUBSTITUTION OF CHALCOGEN ATOMS
Authors: ZIMIN SP KUZNETSOV VS PROKAZNIKOV AV
Citation: Sp. Zimin et al., CHANGE OF LIGHT HOLES VALENCE-BAND IN LEAD-TIN TELLURIDE FILMS BY ISOVALENT SUBSTITUTION OF CHALCOGEN ATOMS, Thin solid films, 310(1-2), 1997, pp. 194-198
CAPACITY OF STRUCTURES WITH A THICK LAYER OF POROUS SILICON
Authors: ZIMIN SP KOMAROV EP
Citation: Sp. Zimin et Ep. Komarov, CAPACITY OF STRUCTURES WITH A THICK LAYER OF POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 22(19), 1996, pp. 69-73
PHOTOELECTRIC PROPERTIES OF HIGHLY COMPENSATED LEAD SULFIDE FILMS PREPARED BY IRRADIATION
Authors: ZIMIN SP ZAIKINA RF
Citation: Sp. Zimin et Rf. Zaikina, PHOTOELECTRIC PROPERTIES OF HIGHLY COMPENSATED LEAD SULFIDE FILMS PREPARED BY IRRADIATION, Semiconductors, 29(4), 1995, pp. 379-380
CONCENTRATION OF CHARGE-CARRIERS IN POROU S SILICON MONOCRYSTALLINE MATRIX
Authors: ZIMIN SP
Citation: Sp. Zimin, CONCENTRATION OF CHARGE-CARRIERS IN POROU S SILICON MONOCRYSTALLINE MATRIX, Pis'ma v Zurnal tehniceskoj fiziki, 21(24), 1995, pp. 46-50
ELECTRICAL CHARACTERISTICS OF ALUMINUM CONTACTS TO POROUS SILICON
Authors: ZIMIN SP KUZNETSOV VS PROKAZNIKOV AV
Citation: Sp. Zimin et al., ELECTRICAL CHARACTERISTICS OF ALUMINUM CONTACTS TO POROUS SILICON, Applied surface science, 91(1-4), 1995, pp. 355-358
ELECTRICAL-PROPERTIES OF IRRADIATED LEAD SULFIDE FILM
Authors: ZAIKINA RF ZIMIN SP SARSEMBINOV SS BOCHKAREVA LV
Citation: Rf. Zaikina et al., ELECTRICAL-PROPERTIES OF IRRADIATED LEAD SULFIDE FILM, Semiconductors, 28(11), 1994, pp. 1056-1058
HALL-EFFECT IN LOW-RESISTANCE POROUS CRYS TAL
Authors: ZIMIN SP
Citation: Sp. Zimin, HALL-EFFECT IN LOW-RESISTANCE POROUS CRYS TAL, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 55-59
MECHANISM OF CURRENT TUNNELING IN POROUS SILICON STRUCTURES
Authors: ZIMIN SP KUZNETSOV VS PERCH NV PROKAZNIKOV AV
Citation: Sp. Zimin et al., MECHANISM OF CURRENT TUNNELING IN POROUS SILICON STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 20(22), 1994, pp. 22-26
PROPERTIES OF COMPENSATED LEAD CADMIUM-SULFIDE FILMS
Authors: ZIMIN SP KOREGINA EL BOCHKAREVA LV
Citation: Sp. Zimin et al., PROPERTIES OF COMPENSATED LEAD CADMIUM-SULFIDE FILMS, Semiconductors, 27(1), 1993, pp. 101-102
Risultati: 1-12 |