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Results:
1-7
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Results: 7
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, STRUCTURE OF THE STRANSKI-KRASTANOV LAYER IN SURFACTANT-MEDIATED SB GE/SI(111) EPITAXY/, Surface science, 351(1-3), 1996, pp. 233-238
Authors:
VOIGTLANDER B
ZINNER A
WEBER T
Citation: B. Voigtlander et al., HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY DURING MOLECULAR-BEAM EPITAXY, Review of scientific instruments, 67(7), 1996, pp. 2568-2572
Authors:
VOIGTLANDER B
ZINNER A
WEBER T
BONZEL HP
Citation: B. Voigtlander et al., MODIFICATION OF GROWTH-KINETICS IN SURFACTANT-MEDIATED EPITAXY, Physical review. B, Condensed matter, 51(12), 1995, pp. 7583-7591
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, SURFACTANT-MEDIATED EPITAXY OF GE ON SI(111) - THE ROLE OF KINETICS AND CHARACTERIZATION OF THE GE LAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1932-1937
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, INFLUENCE OF SURFACE REACTANTS ON THE GROWTH-KINETICS OF SI ON SI(111) (VOL 292, PG L 775, 1993), Surface science, 297(2), 1993, pp. 120000091-120000091
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, INFLUENCE OF SURFACTANTS ON THE GROWTH-KINETICS OF SI ON SI(111), Surface science, 292(1-2), 1993, pp. 120000775-120000780
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, SIMULTANEOUS MOLECULAR-BEAM EPITAXY GROWTH AND SCANNING-TUNNELING-MICROSCOPY IMAGING DURING GE SI EPITAXY/, Applied physics letters, 63(22), 1993, pp. 3055-3057
Risultati:
1-7
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