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Citation: A. Dargys et al., DISSIPATIVE ACCEPTOR-VALENCE-BAND TUNNELING IN GAAS-C-AS, Journal of physics. Condensed matter, 7(47), 1995, pp. 8967-8977

Authors: DARGYS A ZURAUSKAS S

Citation: A. Dargys et S. Zurauskas, TUNNEL IONIZATION OF SHALLOW ACCEPTERS AND DONORS IN GAAS, Journal of physics. Condensed matter, 7(10), 1995, pp. 2133-2146

Authors: DARGYS A ZURAUSKAS S BERTULIS K

Citation: A. Dargys et al., TUNNEL IONIZATION OF ACCEPTORS IN P-GAAS, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000055-110000057

Authors: DARGYS A ZURAUSKAS S ZURAUSKIENE N

Citation: A. Dargys et al., FIELD-IONIZATION OF SHALLOW ACCEPTORS, Acta Physica Polonica. A, 84(4), 1993, pp. 629-632

Authors: DARGYS A ZURAUSKAS S

Citation: A. Dargys et S. Zurauskas, A NEW METHOD FOR THE STUDY OF EXCITONS IN SEMICONDUCTORS, Semiconductor science and technology, 8(4), 1993, pp. 518-524