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Results: 1-9 |
Results: 9
GaN layer growth optimization for high power devices
Authors: Bar-Ilan, AH Zamir, S Katz, O Meyler, B Salzman, J
Citation: Ah. Bar-ilan et al., GaN layer growth optimization for high power devices, MAT SCI E A, 302(1), 2001, pp. 14-17
Udder disease etiology, milk somatic cell counts and NAGase activity in Israeli Assaf sheep throughout lactation
Authors: Leitner, G Chaffer, M Zamir, S Mor, T Glickman, A Winkler, M Weisblit, L Saran, A
Citation: G. Leitner et al., Udder disease etiology, milk somatic cell counts and NAGase activity in Israeli Assaf sheep throughout lactation, SMALL RUMIN, 39(2), 2001, pp. 107-112
Lateral confined epitaxy of GaN layers on Si substrates
Authors: Zamir, S Meyler, B Salzman, J
Citation: S. Zamir et al., Lateral confined epitaxy of GaN layers on Si substrates, J CRYST GR, 230(3-4), 2001, pp. 341-345
Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy
Authors: Zamir, S Meyler, B Salzman, J
Citation: S. Zamir et al., Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy, APPL PHYS L, 78(3), 2001, pp. 288-290
A sealed-bid auction that matches the English auction
Authors: Perry, M Wolfstetter, E Zamir, S
Citation: M. Perry et al., A sealed-bid auction that matches the English auction, GAME ECON B, 33(2), 2000, pp. 265-273
Grain-boundary-controlled transport in GaN layers
Authors: Shalish, I Kronik, L Segal, G Shapira, Y Zamir, S Meyler, B Salzman, J
Citation: I. Shalish et al., Grain-boundary-controlled transport in GaN layers, PHYS REV B, 61(23), 2000, pp. 15573-15576
The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
Authors: Zamir, S Meyler, B Zolotoyabko, E Salzman, J
Citation: S. Zamir et al., The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD, J CRYST GR, 218(2-4), 2000, pp. 181-190
Multiparameter statistical design of experiments for GaN growth optimization
Authors: Bar-Ilan, AH Zamir, S Katz, O Meyler, B Salzman, J
Citation: Ah. Bar-ilan et al., Multiparameter statistical design of experiments for GaN growth optimization, PHYS ST S-A, 176(1), 1999, pp. 313-317
Electrical isolation of GaN by ion implantation damage: Experiment and model
Authors: Uzan-Saguy, C Salzman, J Kalish, R Richter, V Tish, U Zamir, S Prawer, S
Citation: C. Uzan-saguy et al., Electrical isolation of GaN by ion implantation damage: Experiment and model, APPL PHYS L, 74(17), 1999, pp. 2441-2443
Risultati: 1-9 |