Authors: Ma, PX Yang, YF Zampardi, P Huang, RT Chang, MF

Citation: Px. Ma et al., Modulating HBT's current gain by using externally biased on-ledge Schottkydiode, IEEE ELEC D, 21(8), 2000, pp. 373-375

Authors: Ma, PX Chang, MF Zampardi, P Canfield, P Sheu, J Li, GP

Citation: Px. Ma et al., Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode, IEEE ELEC D, 21(11), 2000, pp. 528-530

Authors: Zhang, SM Niu, GF Cressler, JD Mathew, SJ Gogineni, U Clark, SD Zampardi, P Pierson, RL

Citation: Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527

Authors: Ma, PX Zampardi, P Zhang, LY Chang, MF

Citation: Px. Ma et al., Determining the effectiveness of HBT emitter ledge passivation by using anon-ledge Schottky diode potentiometer, IEEE ELEC D, 20(9), 1999, pp. 460-462

Authors: Chang, C Asbeck, P Zampardi, P Wang, KC

Citation: C. Chang et al., Direct measurement of C-bc and C-bc versus voltage for small HBT's with microwave s-parameters for scaled Gummel-Poon BJT models, IEEE MICR T, 47(1), 1999, pp. 108-110