AAAAAA

   
Results: 1-9 |
Results: 9
HBT collector characterization by the spectral photocurrent technique
Authors: Schuermeyer, F Zampardi, PJ Fitzsimmons, S Welser, R Pan, N
Citation: F. Schuermeyer et al., HBT collector characterization by the spectral photocurrent technique, IEICE TR EL, E84C(10), 2001, pp. 1383-1388
Current status and future trends of SiGeBiCMOS technology
Authors: Harame, DL Ahlgren, DC Coolbaugh, DD Dunn, JS Freeman, GG Gillis, JD Groves, RA Hendersen, GN Johnson, RA Joseph, AJ Subbanna, S Victor, AM Watson, KM Webster, CS Zampardi, PJ
Citation: Dl. Harame et al., Current status and future trends of SiGeBiCMOS technology, IEEE DEVICE, 48(11), 2001, pp. 2575-2594
16GHz low-power 1 : 4 prescalar fabricated in 1.0 mu m BiFET technology
Authors: Runge, K Zampardi, PJ Pierson, RL Penny, J
Citation: K. Runge et al., 16GHz low-power 1 : 4 prescalar fabricated in 1.0 mu m BiFET technology, ELECTR LETT, 37(6), 2001, pp. 389-390
High performance Al0.35Ga0.65As/GaAs HBT's
Authors: Welser, RE Pan, N Lutz, CR Vu, DP Zampardi, PJ Pierson, RL McDermott, BT
Citation: Re. Welser et al., High performance Al0.35Ga0.65As/GaAs HBT's, IEEE ELEC D, 21(5), 2000, pp. 196-199
Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy
Authors: Rosenthal, PA Yu, ET Pierson, RL Zampardi, PJ
Citation: Pa. Rosenthal et al., Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy, J APPL PHYS, 87(4), 2000, pp. 1937-1942
Photoemission studies on heterostructure bipolar transistors
Authors: Schuermeyer, F Zampardi, PJ Asbeck, PM
Citation: F. Schuermeyer et al., Photoemission studies on heterostructure bipolar transistors, SOL ST ELEC, 43(8), 1999, pp. 1555-1560
Heterostructure-based high-speed/high-frequency electronic circuit applications
Authors: Zampardi, PJ Runge, K Pierson, RL Higgins, JA Yu, R McDermott, BT Pan, N
Citation: Pj. Zampardi et al., Heterostructure-based high-speed/high-frequency electronic circuit applications, SOL ST ELEC, 43(8), 1999, pp. 1633-1643
Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications
Authors: Chen, PF Hsin, YMT Welty, RJ Asbeck, PM Pierson, RL Zampardi, PJ Ho, WJ Ho, MCV Chang, MF
Citation: Pf. Chen et al., Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications, IEEE MICR T, 47(8), 1999, pp. 1433-1438
Role of neutral base recombination in high gain AlGaAs/GaAs HBT's
Authors: Welser, RE Pan, NR Vu, DP Zampardi, PJ McDermott, BT
Citation: Re. Welser et al., Role of neutral base recombination in high gain AlGaAs/GaAs HBT's, IEEE DEVICE, 46(8), 1999, pp. 1599-1607
Risultati: 1-9 |