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Results:
1-3
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Results: 3
Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's
Authors:
Aniel, F Zerounian, N Adde, R Zeuner, M Hackbarth, T Konig, U
Citation:
F. Aniel et al., Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's, IEEE DEVICE, 47(7), 2000, pp. 1477-1483
Complex current gain and cutoff frequency determination of HBTs
Authors:
Zerounian, N Aniel, F Adde, R
Citation:
N. Zerounian et al., Complex current gain and cutoff frequency determination of HBTs, ELECTR LETT, 36(14), 2000, pp. 1236-1237
SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K
Authors:
Zerounian, N Aniel, F Adde, R Gruhle, A
Citation:
N. Zerounian et al., SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K, ELECTR LETT, 36(12), 2000, pp. 1076-1078
Risultati:
1-3
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