Authors: Zhao, FC Ding, Y Xia, GQ Tan, HZ

Citation: Fc. Zhao et al., Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices, J APPL PHYS, 87(3), 2000, pp. 1482-1484

Authors: Zhao, FC Xia, GQ Du, LX Tan, HZ

Citation: Fc. Zhao et al., Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps, J APPL PHYS, 85(1), 1999, pp. 604-607