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Results: 26-50/80
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., V/III ratio and silicon doping effects on the properties of In1-xGaxP/GaAsgrown by solid source molecular beam epitaxy, OPT MATER, 14(1), 2000, pp. 59-68
Authors:
Yoon, SF
Lui, PY
Zheng, HQ
Citation: Sf. Yoon et al., Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solidsource molecular beam epitaxy, MAT SCI E B, 76(2), 2000, pp. 101-106
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 110-114
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, AHT
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell, MAT SCI E B, 74(1-3), 2000, pp. 151-157
Authors:
Wang, H
Ng, GI
Zheng, HQ
Xiong, YZ
Chua, LH
Yuan, KH
Radhakrishnan, K
Yoon, SF
Citation: H. Wang et al., Demonstration of aluminum-free metamorphic InP/Tn(0.53)Ga(0.47)As/InP double heterojunction bipolar transistors on GaAs substrates, IEEE ELEC D, 21(9), 2000, pp. 427-429
Authors:
Radhakrishnan, K
Tan, CL
Zheng, HQ
Ng, GI
Citation: K. Radhakrishnan et al., Preparation and characterization of rf-sputtered SrTiO3 thin films, J VAC SCI A, 18(4), 2000, pp. 1638-1641
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Study of doping concentration variation in InGaAs/InP high electron mobility transistor layer structures by Raman scattering, J VAC SCI A, 18(2), 2000, pp. 713-716
Authors:
Yuan, F
Zheng, HQ
Citation: F. Yuan et Hq. Zheng, Studying high energy final state interactions by N/D method, CHIN PHYS L, 17(7), 2000, pp. 475-477
Authors:
Li, ZH
Yuan, F
Zheng, HQ
Citation: Zh. Li et al., Some remarks on the final state interactions in B ->pi K decays, COMM TH PHY, 34(3), 2000, pp. 567-570
Authors:
Radhakrishnan, K
Patrick, THK
Zhang, PH
Zheng, HQ
Yoon, SF
Raman, A
Citation: K. Radhakrishnan et al., Effect of growth interruption on the electrical and optical characteristics of InP/InGaAs HEMT structures, MICROEL ENG, 51-2, 2000, pp. 433-440
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures, MICROEL ENG, 51-2, 2000, pp. 441-448
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system, SOL ST ELEC, 44(7), 2000, pp. 1267-1274
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor, SOL ST ELEC, 44(6), 2000, pp. 1035-1042
Authors:
Yoon, SF
Yip, KH
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy, SOL ST ELEC, 44(11), 2000, pp. 1909-1916
Authors:
Zheng, HQ
Wang, H
Zhang, PH
Zeng, Z
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Band gap narrowing effect in Be-doped AlxGa1-xAs studied by photoluminescence spectroscopy, SOL ST ELEC, 44(1), 2000, pp. 37-40
Authors:
Zhuang, QD
Yoon, SF
Zheng, HQ
Citation: Qd. Zhuang et al., Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice, SOL ST COMM, 117(8), 2000, pp. 465-469
Authors:
Yoon, SF
Kam, AHT
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT, MICROELEC J, 31(8), 2000, pp. 667-676
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Gay, BP
Zhang, PH
Citation: Sf. Yoon et al., Observation of weak ordering effects and surface morphology study of InGaPgrown by solid source molecular beam epitaxy, MICROELEC J, 31(1), 2000, pp. 15-21
Authors:
Yoon, SF
Yip, KH
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., Effect of deep levels on the characteristics of InGa1-xP/In0.20Ca0.80As/GaAs high-electron mobility transistor grown by solid-source MBE, J CRYST GR, 217(1-2), 2000, pp. 33-39
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures, J CRYST GR, 216(1-4), 2000, pp. 51-56
Authors:
Zhuang, QD
Yoon, SF
Zheng, HQ
Yuan, KH
Citation: Qd. Zhuang et al., Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 57-61
Authors:
Yoon, SF
Lui, PY
Zheng, HQ
Citation: Sf. Yoon et al., Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy, J CRYST GR, 212(1-2), 2000, pp. 49-55
Authors:
Zhuang, QD
Li, JM
Zeng, YP
Yoon, SF
Zheng, HQ
Kong, MY
Lin, LY
Citation: Qd. Zhuang et al., Effect of rapid thermal annealing on InGaAs/GaAs quantum wells, J CRYST GR, 212(1-2), 2000, pp. 352-355
Authors:
Zhang, DH
Shi, W
Zheng, HQ
Yoon, SF
Kam, CH
Wang, XZ
Citation: Dh. Zhang et al., Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell, J CRYST GR, 211(1-4), 2000, pp. 384-388
Authors:
Wang, XZ
Zhang, DH
Zheng, HQ
Yoon, SF
Kam, CH
Shi, W
Raman, A
Citation: Xz. Wang et al., Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell, J CRYST GR, 210(4), 2000, pp. 458-462