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Citation: Ti. Voronina et al., Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties, SEMICONDUCT, 35(3), 2001, pp. 331-337

Authors: Danilova, TN Zhurtanov, BE Imenkov, AN Sipovskaya, MA Yakovlev, YP

Citation: Tn. Danilova et al., AlGaAsSb lasers emitting in the 1.6 mu m region, TECH PHYS L, 25(5), 1999, pp. 395-397

Authors: Zhurtanov, BE Moiseev, KD Mikhailova, MP Voronina, TI Stoyanov, ND Yakovlev, YP

Citation: Be. Zhurtanov et al., Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure, SEMICONDUCT, 33(3), 1999, pp. 355-358

Authors: Danilova, TN Zhurtanov, BE Zakgeim, AL Il'inskaya, ND Imenkov, AN Saraev, ON Sipovskaya, MA Sherstnev, VV Yakovlev, YP

Citation: Tn. Danilova et al., High-power light-emitting diodes operating in the 1.9 to 2.1-mu m spectralrange, SEMICONDUCT, 33(2), 1999, pp. 206-209