Authors: Keller, S Wu, YF Parish, G Ziang, NQ Xu, JJ Keller, BP DenBaars, SP Mishra, UK

Citation: S. Keller et al., Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB, IEEE DEVICE, 48(3), 2001, pp. 552-559