AAAAAA

   
Results: 1-19 |
Results: 19
Spirocyclopropanated bicyclopropylidenes: Straightforward preparation, physical properties, and chemical transformations
Authors: de Meijere, A von Seebach, M Zollner, S Kozhushkov, SI Belov, VN Boese, R Haumann, T Benet-Buchholz, J Yufit, DS Howard, JAK
Citation: A. De Meijere et al., Spirocyclopropanated bicyclopropylidenes: Straightforward preparation, physical properties, and chemical transformations, CHEM-EUR J, 7(18), 2001, pp. 4021-4034
Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313
Authors: Prokofyeva, T Seon, M Vanbuskirk, J Holtz, M Nikishin, SA Faleev, NN Temkin, H Zollner, S
Citation: T. Prokofyeva et al., Vibrational properties of AlN grown on (111)-oriented silicon - art. no. 125313, PHYS REV B, 6312(12), 2001, pp. 5313
Sphingosine 1-phosphate activates Akt, nitric oxide production, and chemotaxis through a G(i) protein/phosphoinositide 3-kinase pathway in endothelial cells
Authors: Morales-Ruiz, M Lee, MJ Zollner, S Gratton, JP Scotland, R Shiojima, I Walsh, K Hla, T Sessa, WC
Citation: M. Morales-ruiz et al., Sphingosine 1-phosphate activates Akt, nitric oxide production, and chemotaxis through a G(i) protein/phosphoinositide 3-kinase pathway in endothelial cells, J BIOL CHEM, 276(22), 2001, pp. 19672-19677
Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV
Authors: Zollner, S
Citation: S. Zollner, Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV, J APPL PHYS, 90(1), 2001, pp. 515-517
Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods
Authors: Taraci, J Zollner, S McCartney, MR Menendez, J Santana-Aranda, MA Smith, DJ Haaland, A Tutukin, AV Gundersen, G Wolf, G Kouvetakis, J
Citation: J. Taraci et al., Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods, J AM CHEM S, 123(44), 2001, pp. 10980-10987
Optical properties of bulk and thin-film SrTiO3 on Si and Pt
Authors: Zollner, S Demkov, AA Liu, R Fejes, PL Gregory, RB Alluri, P Curless, JA Yu, Z Ramdani, J Droopad, R Tiwald, TE Hilfiker, JN Woollam, JA
Citation: S. Zollner et al., Optical properties of bulk and thin-film SrTiO3 on Si and Pt, J VAC SCI B, 18(4), 2000, pp. 2242-2254
Changes of endothelial nitric oxide synthase level and activity during endothelial cell proliferation
Authors: Zollner, S Aberle, S Harvey, SE Polokoff, MA Rubanyi, GM
Citation: S. Zollner et al., Changes of endothelial nitric oxide synthase level and activity during endothelial cell proliferation, ENDOTHELIU, 7(3), 2000, pp. 169-184
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates
Authors: Liaw, HM Doyle, R Fejes, PL Zollner, S Konkar, A Linthicum, KJ Gehrke, T Davis, RF
Citation: Hm. Liaw et al., Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates, SOL ST ELEC, 44(4), 2000, pp. 747-755
Ellipsometry of platinum films on silicon
Authors: Zollner, S
Citation: S. Zollner, Ellipsometry of platinum films on silicon, PHYS ST S-A, 177(2), 2000, pp. R7-R8
Optical constants and ellipsometric thickness determination of strained Si1-xGex : C layers on Si (100) and related heterostructures
Authors: Zollner, S Hildreth, J Liu, R Zaumseil, P Weidner, M Tillack, B
Citation: S. Zollner et al., Optical constants and ellipsometric thickness determination of strained Si1-xGex : C layers on Si (100) and related heterostructures, J APPL PHYS, 88(7), 2000, pp. 4102-4108
Visible and ultraviolet Raman scattering studies of Si1-xGex alloys
Authors: Holtz, M Duncan, WM Zollner, S Liu, R
Citation: M. Holtz et al., Visible and ultraviolet Raman scattering studies of Si1-xGex alloys, J APPL PHYS, 88(5), 2000, pp. 2523-2528
Thin-film metrology of silicon-on-insulator materials
Authors: Zollner, S Lee, TC Noehring, K Konkar, A Theodore, ND Huang, WM Monk, D Wetteroth, T Wilson, SR Hilfiker, JN
Citation: S. Zollner et al., Thin-film metrology of silicon-on-insulator materials, APPL PHYS L, 76(1), 2000, pp. 46-48
A coalescent approach to study linkage disequilibrium between single-nucleotide polymorphisms
Authors: Zollner, S von Haeseler, A
Citation: S. Zollner et A. Von Haeseler, A coalescent approach to study linkage disequilibrium between single-nucleotide polymorphisms, AM J HU GEN, 66(2), 2000, pp. 615-628
Under the microscope
Authors: Doring, A Stahr, J Zollner, S
Citation: A. Doring et al., Under the microscope, ADHES AGE, 43(9), 2000, pp. 39-43
Nitric oxide and angiogenesis
Authors: Johns, A Zollner, S
Citation: A. Johns et S. Zollner, Nitric oxide and angiogenesis, ANGIOGENESIS IN HEALTH AND DISEASE, 2000, pp. 191-198
Dielectric function of polycrystalline SiC from 190 nm to 15 mu m
Authors: Zollner, S Liu, R Konkar, A Gutt, J Wilson, SR Tiwald, TI Woollam, JA Hilfiker, JN
Citation: S. Zollner et al., Dielectric function of polycrystalline SiC from 190 nm to 15 mu m, PHYS ST S-B, 215(1), 1999, pp. 21-25
Carrier concentration and lattice absorption in bulk and epitaxial siliconcarbide determined using infrared ellipsometry
Authors: Tiwald, TE Woollam, JA Zollner, S Christiansen, J Gregory, RB Wetteroth, T Wilson, SR Powell, AR
Citation: Te. Tiwald et al., Carrier concentration and lattice absorption in bulk and epitaxial siliconcarbide determined using infrared ellipsometry, PHYS REV B, 60(16), 1999, pp. 11464-11474
Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si
Authors: Zollner, S Chen, JG Duda, E Wetteroth, T Wilson, SR Hilfiker, JN
Citation: S. Zollner et al., Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si, J APPL PHYS, 85(12), 1999, pp. 8353-8361
High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia
Authors: Nikishin, SA Antipov, VG Francoeur, S Faleev, NN Seryogin, GA Elyukhin, VA Temkin, H Prokofyeva, TI Holtz, M Konkar, A Zollner, S
Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486
Risultati: 1-19 |