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Results: 1-13 |
Results: 13
Special issue on group III-N semiconductor electronics - Foreword
Authors: Mishra, UK Zolper, JC
Citation: Uk. Mishra et Jc. Zolper, Special issue on group III-N semiconductor electronics - Foreword, IEEE DEVICE, 48(3), 2001, pp. 405-406
Fabrication and characterization of GaN junctionfield effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Fabrication and characterization of GaN junctionfield effect transistors, MRS I J N S, 5, 2000, pp. NIL_322-NIL_328
Special issue - Proceedings of the workshop on wide bandgap bipolar devices - January 24-28, 1999 - Marriott Bay Point Resort Village - Panama City Beach, FL - Preface
Authors: Brown, A Zolper, JC
Citation: A. Brown et Jc. Zolper, Special issue - Proceedings of the workshop on wide bandgap bipolar devices - January 24-28, 1999 - Marriott Bay Point Resort Village - Panama City Beach, FL - Preface, SOL ST ELEC, 44(2), 2000, pp. 193-193
Transmission electron microscopy of Be implanted Si-doped GaAs
Authors: Kroon, RE Neethling, JH Zolper, JC
Citation: Re. Kroon et al., Transmission electron microscopy of Be implanted Si-doped GaAs, PHYS ST S-A, 182(2), 2000, pp. 607-617
Epitaxially-grown GaN junction field effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Epitaxially-grown GaN junction field effect transistors, IEEE DEVICE, 47(3), 2000, pp. 507-511
Thermal stability of WSix and W ohmic contacts on GaN
Authors: Cao, XA Pearton, SJ Donovan, SM Abernathy, CR Ren, F Zolper, JC Cole, MW Zeitouny, A Eizenberg, M Shul, RJ Baca, AG
Citation: Xa. Cao et al., Thermal stability of WSix and W ohmic contacts on GaN, MAT SCI E B, 59(1-3), 1999, pp. 362-365
W and WSix Ohmic contacts on p- and n-type GaN
Authors: Cao, XA Ren, F Pearton, SJ Zeitouny, A Eizenberg, M Zolper, JC Abernathy, CR Han, J Shul, RJ Lothian, JR
Citation: Xa. Cao et al., W and WSix Ohmic contacts on p- and n-type GaN, J VAC SCI A, 17(4), 1999, pp. 1221-1225
Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN
Authors: Wilson, RG Zavada, JM Cao, XA Singh, RK Pearton, SJ Guo, HJ Pennycock, SJ Fu, M Sekhar, JA Scarvepalli, V Shu, RJ Han, J Rieger, DJ Zolper, JC Abernathy, CR
Citation: Rg. Wilson et al., Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN, J VAC SCI A, 17(4), 1999, pp. 1226-1229
Redistribution of implanted dopants in GaN
Authors: Cao, XA Wilson, RG Zolper, JC Pearton, SJ Han, J Shul, RJ Rieger, DJ Singh, RK Fu, M Scarvepalli, V Sekhar, JA Zavada, JM
Citation: Xa. Cao et al., Redistribution of implanted dopants in GaN, J ELEC MAT, 28(3), 1999, pp. 261-265
Progress towards ultra-wideband AlGaN/GaN MMICs
Authors: Zolper, JC
Citation: Jc. Zolper, Progress towards ultra-wideband AlGaN/GaN MMICs, SOL ST ELEC, 43(8), 1999, pp. 1479-1482
GaN: Processing, defects, and devices
Authors: Pearton, SJ Zolper, JC Shul, RJ Ren, F
Citation: Sj. Pearton et al., GaN: Processing, defects, and devices, J APPL PHYS, 86(1), 1999, pp. 1-78
Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4GHz
Authors: Baca, AG Hietala, VM Greenway, D Zolper, JC Dubbert, DF Sloan, LR Shul, RJ
Citation: Ag. Baca et al., Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs at 2.4GHz, ELECTR LETT, 35(4), 1999, pp. 308-309
A review of junction field effect transistors for high-temperature and high-power electronics
Authors: Zolper, JC
Citation: Jc. Zolper, A review of junction field effect transistors for high-temperature and high-power electronics, SOL ST ELEC, 42(12), 1998, pp. 2153-2156
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