AAAAAA

   
Results: 1-11 |
Results: 11
The formation of nitridation damage during the growth of GaN on GaAs(001)
Authors: Zsebok, O Thordson, JV Andersson, TG
Citation: O. Zsebok et al., The formation of nitridation damage during the growth of GaN on GaAs(001), JPN J A P 1, 40(2A), 2001, pp. 472-475
Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
Authors: Zsebok, O Thordson, JV Nilsson, B Andersson, TG
Citation: O. Zsebok et al., Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques, NANOTECHNOL, 12(1), 2001, pp. 32-37
The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)
Authors: Zsebok, O Thordson, JV Gunnarsson, JR Zhao, QX Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001), J APPL PHYS, 89(7), 2001, pp. 3662-3667
Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy
Authors: Zsebok, O Thordson, JV Zhao, QX Andersson, TG
Citation: O. Zsebok et al., Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy, J APPL PHYS, 89(3), 2001, pp. 1954-1958
The effect of Al in plasma-assisted MBE-grown GaN
Authors: Zsebok, O Thordson, JV Zhao, QX Sodervall, U Ilver, L Andersson, TG
Citation: O. Zsebok et al., The effect of Al in plasma-assisted MBE-grown GaN, MRS I J N S, 5, 2000, pp. NIL_185-NIL_190
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs
Authors: Zsebok, O Thordson, JV Ilver, L Sodervall, U Andersson, TG
Citation: O. Zsebok et al., Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9layers on GaAs, APPL SURF S, 166(1-4), 2000, pp. 259-262
Nanocrystals at MBE-grown GaN/GaAs(001) interfaces
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Nanocrystals at MBE-grown GaN/GaAs(001) interfaces, APPL SURF S, 166(1-4), 2000, pp. 317-321
Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE
Authors: Zsebok, O Thordson, JV Zhao, QX Andersson, TG
Citation: O. Zsebok et al., Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE, APPL SURF S, 166(1-4), 2000, pp. 423-427
GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy
Authors: Zhao, QX Zsebok, O Sodervall, U Karlsteen, M Willander, M Liu, XQ Chen, YD Lu, W Shen, SC
Citation: Qx. Zhao et al., GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 117-122
Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys
Authors: Zsebok, O Thordson, JV Ilver, L Andersson, TG
Citation: O. Zsebok et al., Surface morphology and compositional variations in molecular beam epitaxy grown GaNxAs1-x alloys, NANOSTR MAT, 12(1-4), 1999, pp. 425-428
Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)
Authors: Thordson, JV Zsebok, O Andersson, TG
Citation: Jv. Thordson et al., Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001), PHYS SCR, T79, 1999, pp. 198-201
Risultati: 1-11 |