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Results: 1-13 |
Results: 13
Light-emitting diodes: Progress in solid-state lighting
Authors: Zukauskas, A Shur, MS Gaska, R
Citation: A. Zukauskas et al., Light-emitting diodes: Progress in solid-state lighting, MRS BULL, 26(10), 2001, pp. 764-769
Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
Authors: Jursenas, S Kurilcik, N Kurilcik, G Zukauskas, A Prystawko, P Leszcynski, M Suski, T Perlin, P Grzegory, I Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
Optical bandgap formation in AlInGaN alloys
Authors: Tamulaitis, G Kazlauskas, K Jursenas, S Zukauskas, A Khan, MA Yang, JW Zhang, J Simin, G Shur, MS Gaska, R
Citation: G. Tamulaitis et al., Optical bandgap formation in AlInGaN alloys, APPL PHYS L, 77(14), 2000, pp. 2136-2138
Lattice and energy band engineering in AlInGaN/GaN heterostructures
Authors: Khan, MA Yang, JW Simin, G Gaska, R Shur, MS zur Loye, HC Tamulaitis, G Zukauskas, A Smith, DJ Chandrasekhar, D Bicknell-Tassius, R
Citation: Ma. Khan et al., Lattice and energy band engineering in AlInGaN/GaN heterostructures, APPL PHYS L, 76(9), 2000, pp. 1161-1163
Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers
Authors: Jursenas, S Kurilcik, G Tamulaitis, G Zukauskas, A Gaska, R Shur, MS Khan, MA Yang, JW
Citation: S. Jursenas et al., Dynamic behavior of hot-electron-hole plasma in highly excited GaN epilayers, APPL PHYS L, 76(17), 2000, pp. 2388-2390
Hot electrons and holes in highly photoexcited GaN epilayers
Authors: Zukauskas, A Tamulaitis, G Gaska, R Shur, MS Khan, MA Yang, JW
Citation: A. Zukauskas et al., Hot electrons and holes in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 495-499
Finite-temperature band gap renormalization in highly photoexcited GaN epilayers
Authors: Zukauskas, A Jursenas, S Kurilcik, G Tamulaitis, G Shur, MS Gaska, R Yang, JW Khan, MA
Citation: A. Zukauskas et al., Finite-temperature band gap renormalization in highly photoexcited GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 501-504
Carrier cooling in CdS crystallites under extremely high photoexcitation
Authors: Jursenas, S Kurilcik, G Zukauskas, A
Citation: S. Jursenas et al., Carrier cooling in CdS crystallites under extremely high photoexcitation, PHYS SCR, T79, 1999, pp. 167-169
Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors
Authors: Jursenas, S Tamulaitis, G Kurilcik, G Zukauskas, A
Citation: S. Jursenas et al., Nonradiative capture of hot photoelectrons by multiphonon emission in highly excited polar semiconductors, PHYS SCR, T79, 1999, pp. 187-192
The AlGaAs light emitting particle detector
Authors: Pozela, J Pozela, K Silenas, A Juciene, V Dapkus, L Jasutis, V Tamulaitis, G Zukauskas, A Bendorius, RA
Citation: J. Pozela et al., The AlGaAs light emitting particle detector, NUCL INST A, 434(1), 1999, pp. 169-172
Energy band/lattice mismatch engineering in quaternary AlInGaN/GaN heterostructure
Authors: Khan, MA Yang, JW Simin, G zur Loye, H Bicknell-Tassius, R Gaska, R Shur, MS Tamulaitis, G Zukauskas, A
Citation: Ma. Khan et al., Energy band/lattice mismatch engineering in quaternary AlInGaN/GaN heterostructure, PHYS ST S-A, 176(1), 1999, pp. 227-230
Heating of photogenerated electrons and holes in highly excited GaN epilayers
Authors: Tamulaitis, G Zukauskas, A Yang, JW Khan, MA Shur, MS Gaska, R
Citation: G. Tamulaitis et al., Heating of photogenerated electrons and holes in highly excited GaN epilayers, APPL PHYS L, 75(15), 1999, pp. 2277-2279
Dense electron-hole plasma cooling due to second nonequilibrium-phonon bottleneck in CdS crystallites
Authors: Jursenas, S Kurilcik, G Zukauskas, A
Citation: S. Jursenas et al., Dense electron-hole plasma cooling due to second nonequilibrium-phonon bottleneck in CdS crystallites, PHYS REV B, 58(19), 1998, pp. 12937-12943
Risultati: 1-13 |