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Results:
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Results: 10
Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon
Authors:
Cristiano, F
Colombeau, B
Grisolia, J
de Mauduit, B
Giles, F
Omri, M
Skarlatos, D
Tsoukalas, D
Claverie, A
Citation: F. Cristiano et al., Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon, NUCL INST B, 178, 2001, pp. 84-88
Authors:
Claverie, A
Colombeau, B
Ben Assayag, G
Bonafos, C
Cristiano, F
Omri, M
de Mauduit, B
Citation: A. Claverie et al., Thermal evolution of extended defects in implanted Si: impact on dopant diffusion, MAT SC S PR, 3(4), 2000, pp. 269-277
Authors:
Cristiano, F
Grisolia, J
Colombeau, B
Omri, M
de Mauduit, B
Claverie, A
Giles, LF
Cowern, NEB
Citation: F. Cristiano et al., Formation energies and relative stability of perfect and faulted dislocation loops in silicon, J APPL PHYS, 87(12), 2000, pp. 8420-8428
Authors:
de Mauduit, B
Bourgerette, C
Paillard, V
Puech, P
Caussat, B
Citation: B. De Mauduit et al., Structure of mixed-phase LPCVD silicon films as a function of operating conditions, J PHYS IV, 9(P8), 1999, pp. 1091-1098
Authors:
Temple-Boyer, P
de Mauduit, B
Caussat, B
Couderc, JP
Citation: P. Temple-boyer et al., Correlations between stress and microstructure into LPCVD silicon films, J PHYS IV, 9(P8), 1999, pp. 1107-1114
Authors:
Giles, LF
Omri, M
de Mauduit, B
Claverie, A
Skarlatos, D
Tsoukalas, D
Nejim, A
Citation: Lf. Giles et al., Coarsening of end-of-range defects in ion-implanted silicon annealed in neutral and oxidizing ambients, NUCL INST B, 148(1-4), 1999, pp. 273-278
Authors:
Claverie, A
Giles, LF
Omri, M
de Mauduit, B
Ben Assayag, G
Mathiot, D
Citation: A. Claverie et al., Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion, NUCL INST B, 147(1-4), 1999, pp. 1-12
Authors:
Grisolia, J
de Mauduit, B
Gimbert, J
Billon, T
Ben Assayag, G
Bourgerette, C
Claverie, A
Citation: J. Grisolia et al., TEM studies of the defects introduced by ion implantation in SiC, NUCL INST B, 147(1-4), 1999, pp. 62-67
Authors:
Paillard, V
Puech, P
Temple-Boyer, P
Caussat, B
Scheid, E
Couderc, JP
de Mauduit, B
Citation: V. Paillard et al., Improved characterization of polycrystalline silicon film, by resonant Raman scattering, THIN SOL FI, 337(1-2), 1999, pp. 93-97
Authors:
Caussat, B
Couderc, JP
Scheid, E
Bourgerette, C
de Mauduit, B
Citation: B. Caussat et al., Influence of substrate nature on the microstructure of LPCVD silicon films, J MAT SCI L, 17(22), 1998, pp. 1899-1901
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