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Results: 1
Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure
Authors:
de Paola, E Duverneuil, P Langlais, A Nguyen, M
Citation:
E. De Paola et al., Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure, J PHYS IV, 9(P8), 1999, pp. 221-228
Risultati:
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