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Results: 1-10 |
Results: 10
Efficient blue light emission from silicon - The first integrated Si-basedoptocoupler
Authors: Rebohle, L von Borany, J Borchert, D Frob, H Gebel, T Helm, M Moller, W Skorupa, W
Citation: L. Rebohle et al., Efficient blue light emission from silicon - The first integrated Si-basedoptocoupler, EL SOLID ST, 4(7), 2001, pp. G57-G60
Non-volatile memories based on Si+-implanted gate oxides
Authors: Gebel, T von Borany, J Thees, HJ Wittmaack, M Stegemann, KH Skorupa, W
Citation: T. Gebel et al., Non-volatile memories based on Si+-implanted gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 247-252
Quantitative analysis of carbon distribution in steel used for thermochemical polishing of diamond films
Authors: Weima, JA von Borany, J Kreissig, U Fahrner, WR
Citation: Ja. Weima et al., Quantitative analysis of carbon distribution in steel used for thermochemical polishing of diamond films, J ELCHEM SO, 148(11), 2001, pp. G607-G610
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
Authors: Rebohle, L von Borany, J Frob, H Skorupa, W
Citation: L. Rebohle et al., Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements, APP PHYS B, 71(2), 2000, pp. 131-151
In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers
Authors: Klimenkov, M Matz, W von Borany, J
Citation: M. Klimenkov et al., In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers, NUCL INST B, 168(3), 2000, pp. 367-374
Microstructure and electrical properties of gale SiO2 containing Ge nanoclusters for memory applications
Authors: Thees, HJ Wittmaack, M Stegemann, KH von Borany, J Heinig, KH Gebel, T
Citation: Hj. Thees et al., Microstructure and electrical properties of gale SiO2 containing Ge nanoclusters for memory applications, MICROEL REL, 40(4-5), 2000, pp. 867-871
Strong photoluminescence of Sn-implanted thermally grown SiO2 layers
Authors: Rebohle, L von Borany, J Skorupa, W Frob, H Niedermeier, S
Citation: L. Rebohle et al., Strong photoluminescence of Sn-implanted thermally grown SiO2 layers, APPL PHYS L, 77(7), 2000, pp. 969-971
Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films
Authors: von Borany, J Heinig, KH Grotzschel, R Klimenkov, M Strobel, M Stegemann, KH Thees, HJ
Citation: J. Von Borany et al., Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films, MICROEL ENG, 48(1-4), 1999, pp. 231-234
The formation of narrow nanocluster bands in Ge-implanted SiO2-layers
Authors: von Borany, J Grotzschel, R Heinig, KH Markwitz, A Schmidt, B Skorupa, W Thees, HJ
Citation: J. Von Borany et al., The formation of narrow nanocluster bands in Ge-implanted SiO2-layers, SOL ST ELEC, 43(6), 1999, pp. 1159-1163
Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
Authors: Rebohle, L von Borany, J Skorupa, W Tyschenko, IE Frob, H
Citation: L. Rebohle et al., Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers, J LUMINESC, 80(1-4), 1998, pp. 275-279
Risultati: 1-10 |