Authors:
Brandt, O
Muralidharan, R
Waltereit, P
Thamm, A
Trampert, A
von Kiedrowski, H
Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021