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Authors: Brandt, O Muralidharan, R Waltereit, P Thamm, A Trampert, A von Kiedrowski, H Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021
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