INFLUENCE OF INTERFACE THERMAL CONDUCTANCE ON THE APPARENT THERMAL-CONDUCTIVITY OF THIN-FILMS

Authors
LEE SM CAHILL DG
Citation
Sm. Lee et Dg. Cahill, INFLUENCE OF INTERFACE THERMAL CONDUCTANCE ON THE APPARENT THERMAL-CONDUCTIVITY OF THIN-FILMS, Microscale thermophysical engineering, 1(1), 1997, pp. 47-52
Citations number
10
Categorie Soggetti
Materials Science, Characterization & Testing","Engineering, Mechanical","Physics, Applied
Journal title
Microscale thermophysical engineering → ACNP
ISSN journal
10893954
Volume
1
Issue
1
Year of publication
1997
Pages
47 - 52
Database
ISI
SICI code
1089-3954(1997)1:1<47:IOITCO>2.0.ZU;2-X
Abstract
The thermal conductance of 8-to 200-nm-thick films of SiO2 and MgO is measured in the temperature range 78-400 K using the 3 omega method. T he apparent thermal conductivity of the films is reduced by the finite thermal conductance of the interfaces between the metal film heater a nd the dielectric layer, and between the dielectric layer and the Si s ubstrate. For SiO, films at 250 K, the conductance of the two inferfac es added in series is G(I) = 6 X 10(3) W/cm(2) K, equivalent to the th ermal conductance of a 20-nm-thick film of SiO2. For MgO films, G(I) i s significantly smaller, G(I) approximate to 2.5 X 10(3) W/cm(2) K.