A charge modulation device (CMD) has been fabricated in a p-type epita
xial layer grown from the buried-channel silicon region of a charge-co
upled device (CCD). Construction of the CMD directly above the CCD bur
ied-channel and over the oxidized CCD transfer gates lowers the effect
ive sense capacitance while providing isolation of the CMD source/drai
n regions. Responsivity values of 28 and 66 mu V/e for feedback and no
feedback conditions, respectively, were measured dynamically on test
devices. Input-referred noise values of approximately four electrons r
ms were calculated from noise spectral density measurements assuming a
low-pass filter 3 dB cutoff frequency of 5 MHz and correlated double
sampling.