WIDE INTRASCENE DYNAMIC-RANGE CMOS APS USING DUAL SAMPLING

Authors
YADIDPECHT O FOSSUM ER
Citation
O. Yadidpecht et Er. Fossum, WIDE INTRASCENE DYNAMIC-RANGE CMOS APS USING DUAL SAMPLING, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1721-1723
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
10
Year of publication
1997
Pages
1721 - 1723
Database
ISI
SICI code
0018-9383(1997)44:10<1721:WIDCAU>2.0.ZU;2-O
Abstract
A CMOS active pixel sensor that achieves wide intrascene dynamic range using dual sampling is reported. A 64 x 64 element prototype sensor w ith dual output architecture was fabricated using a 1.2-mu m n-well CM OS process with 20.4-mu m pitch photodiode-type active pixels. The sen sor achieves an intrascene dynamic range of 109 dB without nonlinear c ompanding.