THICK-FILM FABRICATION OF FERROELECTRIC PHASE-SHIFTER MATERIALS

Citation
Lc. Sengupta et al., THICK-FILM FABRICATION OF FERROELECTRIC PHASE-SHIFTER MATERIALS, Integrated ferroelectrics, 13(4), 1996, pp. 203-214
Citations number
4
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
13
Issue
4
Year of publication
1996
Pages
203 - 214
Database
ISI
SICI code
1058-4587(1996)13:4<203:TFOFPM>2.0.ZU;2-G
Abstract
Various composites of BSTO combined with other nonelectrically active oxide ceramics have been formulated. In general, the composites have a djustable electronic properties which can be tailored far use in phase d array antennas and other phase shifting devices. The dielectric cons tant and the loss tangents have been reduced to enhance the overall im pedance matching and thereby lowering the insertion loss of the device . In addition, the overall tunability, the change in the dielectric co nstant with applied voltage, is maintained al a sufficiently high leve l. The thickness limitation of the bulk materials is around 3-4 mils w hich can be used up to approximately 15 GHz. In order to increase the operating frequencies of the phase shifters, thick films were fabricat ed using non-aqueous tape-casting The tapes were electrically characte rized and compared to bulk ceramics. Also, laminated stacks of high di electric constant and low dielectric constant alternating layers were fabricated.