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Results: 1-25/544
Authors:
AUCIELLO O
Citation: O. Auciello, PROCEEDINGS OF THE 10TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - MONTEREY, CALIFORNIA, USA MARCH 1-4, 1998 - PART II, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 19-29
Authors:
SOLAYAPPAN N
JOSHI V
DEVILBISS A
BACON J
CUCHIARO J
MCMILLAN L
DEARAUJO CP
Citation: N. Solayappan et al., CHEMICAL SOLUTION DEPOSITION (CSD) AND CHARACTERIZATION OF FERROELECTRIC AND DIELECTRIC THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 521-531
Authors:
KATO K
Citation: K. Kato, CHEMICAL ROUTES FOR LOW-TEMPERATURE PROCESSING OF LAYER-STRUCTURED PEROVSKITE THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 533-542
Authors:
HARTNER W
SCHINDLER G
WEINRICH V
NAGEL N
ENGELHARDT M
JOSHI W
SOLAYAPPAN N
DERBENWICK G
DEHM C
MAZURE C
Citation: W. Hartner et al., ROLE OF RECOVERY ANNEALS FOR CHEMICAL SOLUTION DEPOSITION (CSD) BASEDSRBI2TA2O9 (SBT) THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 543-553
Authors:
FE L
WOUTERS DJ
NORGA G
MAES HE
GNAPPI G
MONTENERO A
Citation: L. Fe et al., PLZT - PRECURSOR CHARACTERIZATION AND FERROELECTRIC PROPERTIES, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 555-563
Authors:
LAKEMAN CDE
BOYLE TJ
RODRIGUEZ MA
Citation: Cde. Lakeman et al., CHEMICAL SOLUTION DEPOSITION OF SRBI2TA2O9 (SBT) FILMS FOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 565-573
Authors:
SUN S
BELSICK J
UCHIDA H
ATSUKI T
Citation: S. Sun et al., CRYSTALLOGRAPHIC ORIENTATION CONTROL FOR FERROELECTRIC SBT AND SBTN THIN-FILMS FROM PHOTOSENSITIVE MOD SOLUTIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 575-583
Authors:
BARZ R
AMRHEIN F
SHIN YW
DEY SK
Citation: R. Barz et al., PROCESSING AND EFFECTS OF ANNEALING IN SOL-GEL DERIVED SRBI2TA2O9 THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 585-594
Authors:
JOSHI V
SOLAYAPPAN N
HARTNER W
SCHINDLER G
DEHM C
MAZURE C
DERBENWICK G
Citation: V. Joshi et al., THE ROLE OF RAPID THERMAL-PROCESSING IN CRYSTALLIZATION OF SBT THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 595-601
Authors:
GROSSMANN M
HOFFMANN S
GUSOWSKI S
WASER R
STREIFFER SK
BASCERI C
PARKER CB
LASH SE
KINGON AI
Citation: M. Grossmann et al., RESISTANCE DEGRADATION BEHAVIOR OF BA0.7SR0.3TIO3 THIN-FILMS COMPAREDTO MECHANISMS FOUND IN TITANATE CERAMICS AND SINGLE-CRYSTALS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 603-614
Authors:
GROSSMANN M
LOHSE O
BOLTEN D
WASER R
HARTNER W
SCHINDLER G
DEHM C
NAGEL N
JOSHI V
SOLAYAPPAN N
DERBENWICK G
Citation: M. Grossmann et al., IMPRINT IN FERROELECTRIC SRBI2TA2O9 CAPACITORS FOR NONVOLATILE MEMORYAPPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 615-627
Authors:
SCHUMACHER M
WASER R
Citation: M. Schumacher et R. Waser, CURIE-VON-SCHWEIDLER BEHAVIOR OBSERVED IN FERROELECTRIC THIN-FILMS AND COMPARISON TO SUPERPARAELECTRIC THIN-FILM MATERIALS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 629-641
Authors:
LOHSE O
TIEDKE S
GROSSMANN M
WASER R
Citation: O. Lohse et al., EXTERNALLY DETERMINED AND INTRINSIC CONTRIBUTIONS TO THE POLARIZATIONSWITCHING CURRENTS IN SRBI2TA2O9 THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 643-651
Authors:
KIM SH
KIM DJ
HONG JG
STREIFFER SK
KINGON AI
Citation: Sh. Kim et al., THERMALLY-INDUCED IMPRINT PROPERTIES OF CHEMICAL SOLUTION DERIVED PLZT THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 653-662
Authors:
ARITA K
HAYASHI S
OTSUKI T
CHEN Z
LIM M
BACON JW
DEARAUJO CAP
Citation: K. Arita et al., CHARACTERIZATION OF FERROELECTRIC GATE MOS CAPACITORS FORMED BY MOD TECHNIQUE FOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 663-672
Authors:
ROTTER LD
KAISER DL
Citation: Ld. Rotter et Dl. Kaiser, DETECTION OF INTERNAL ELECTRIC-FIELDS IN BATIO3 THIN-FILMS BY OPTICAL2ND-HARMONIC GENERATION, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 673-690
Authors:
BARTIC TA
WOUTERS DJ
MAES HE
Citation: Ta. Bartic et al., A TIME-INDEPENDENT MODEL FOR SIMULATING SWITCHING CURRENT AND HYSTERESIS CHARACTERISTICS OF PZT THIN-FILM FERROELECTRIC CAPACITORS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 691-701
Authors:
HADNAGY TD
DAVENPORT T
Citation: Td. Hadnagy et T. Davenport, ADDITION OF CA AND SR IN PLZT TO IMPROVE FRAM(R) PERFORMANCE AND RELIABILITY, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 703-713
Authors:
DALTON DI
HADNAGY TD
Citation: Di. Dalton et Td. Hadnagy, AN ACCELERATED RELIABILITY TEST FOR RETENTION AFTER FATIGUE IN FERROELECTRIC MEMORY DEVICES, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 715-724
Authors:
LIM M
KALKUR TS
Citation: M. Lim et Ts. Kalkur, THE ROLE OF LEAKAGE CURRENT ON THE MEMORY WINDOW AND MEMORY RETENTIONIN MFIS STRUCTURE, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 725-731
Authors:
HAN JP
GUO X
MA TP
Citation: Jp. Han et al., MEMORY EFFECTS OF SRBI2TA2O9 CAPACITOR ON SILICON WITH A SILICON-NITRIDE BUFFER, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 733-741
Authors:
IM J
KRAUSS AR
AUCIELLO O
GRUEN DM
CHANG RPH
Citation: J. Im et al., MASS-SPECTROSCOPY OF RECOILED ION INVESTIGATION OF ELECTRODE SEGREGATION EFFECTS DURING THE INITIAL-STAGES OF SRBI2TA2O9 FILM GROWTH, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 743-755
Authors:
COLLA EL
TAYLOR DV
HONG SB
TAGANTSEV AK
NO K
SETTER N
Citation: El. Colla et al., MICROSCOPIC OBSERVATION OF REGION BY REGION POLARIZATION DOMAINS FREEZING DURING FATIGUE OF THE PT-PZT-PT SYSTEM, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 757-764
Authors:
GEVORGIAN S
CARLSSON E
WIKBORG E
KOLLBERG E
Citation: S. Gevorgian et al., TUNABLE MICROWAVE DEVICES BASED ON BULK AND THIN-FILM FERROELECTRICS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 765-777
Authors:
FINDIKOGLU AT
JIA QX
REAGOR DW
FAN Y
LYTHE GD
CAMASSA RA
CAI D
GRONBECHJENSEN N
BISHOP AR
Citation: At. Findikoglu et al., NEW POTENTIAL APPLICATIONS OF NONLINEAR DIELECTRICS - MICROWAVE SOLITONS AND STOCHASTIC RESONANCE, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 779-788