CHEMICAL SOLUTION DEPOSITION OF SRBI2TA2O9 (SBT) FILMS FOR NONVOLATILE MEMORY APPLICATIONS

Authors
LAKEMAN CDE BOYLE TJ RODRIGUEZ MA
Citation
Cde. Lakeman et al., CHEMICAL SOLUTION DEPOSITION OF SRBI2TA2O9 (SBT) FILMS FOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 565-573
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
565 - 573
Database
ISI
SICI code
1058-4587(1998)22:1-4<565:CSDOS(>2.0.ZU;2-F
Abstract
SrBi2Ta2O9 (SBT) films have received considerable attention for use as nonvolatile memory elements. We have developed a process to prepare S ET films with good ferroelectric properties at low temperatures. In th is paper, we will present strategies used to optimize the properties o f the films including film composition, the nature of the substrate (o r bottom electrode) used, and the thermal processing cycle. Under appr opriate conditions, similar to 1700 Angstrom films can be prepared whi ch have a large switchable polarization (2P(sw) >10 mu C/cm(2)), and a n operating voltage less than or equal to 2.0V.