CHARACTERIZATION OF FERROELECTRIC GATE MOS CAPACITORS FORMED BY MOD TECHNIQUE FOR NONVOLATILE MEMORY APPLICATIONS

Authors
ARITA K HAYASHI S OTSUKI T CHEN Z LIM M BACON JW DEARAUJO CAP
Citation
K. Arita et al., CHARACTERIZATION OF FERROELECTRIC GATE MOS CAPACITORS FORMED BY MOD TECHNIQUE FOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 663-672
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
663 - 672
Database
ISI
SICI code
1058-4587(1998)22:1-4<663:COFGMC>2.0.ZU;2-H
Abstract
Metal/ferroelectric/insulator/semiconduct (MFIS) -structured ferroelec tric gate MOS capacitors were fabricated and characterized. The metalo rganic decomposition (MOD) technique was employed for the deposition o f not only the ferroelectric but also the insulator, which has been us ually deposited by e-beam evaporation. The experimental results indica te the usefulness of this technique for the fabrication of this hetero structure, which will accelerate the material research in this field.