CHEMICAL ROUTES FOR LOW-TEMPERATURE PROCESSING OF LAYER-STRUCTURED PEROVSKITE THIN-FILMS

Authors
KATO K
Citation
K. Kato, CHEMICAL ROUTES FOR LOW-TEMPERATURE PROCESSING OF LAYER-STRUCTURED PEROVSKITE THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 533-542
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
533 - 542
Database
ISI
SICI code
1058-4587(1998)22:1-4<533:CRFLPO>2.0.ZU;2-1
Abstract
A complex alkoxide, Sr[BiTa(OC2H5)(9)](2), was prepared as the precurs or for SrBi2Ta2O9 (SBT) thin films. The film deposited by using the et hanolic solution of the precursor crystallized to SET below 500 degree s C by rapid thermal annealing in an oxygen flow. The calcination at 2 50 degrees C in a mixture of water vapor and oxygen following the rapi d thermal annealing was found to be effective for improvement of the c rystallinity and the development of the microstructure in the SET film s. The 650 degrees C annealed film exhibited the saturated hysteresis loop at 5 V and improved endurance behavior.