PROCESSING AND EFFECTS OF ANNEALING IN SOL-GEL DERIVED SRBI2TA2O9 THIN-FILMS

Sol-gel derived SrBi2Ta2O9(SBT) thin films, stoichiometric and titaniu m doped, were applied to pure platinum substrates and annealed in oxyg en and forming gas. The films were characterized using SEM, EDS, and A ES. The data showed that bismuth diffused into the platinum layer duri ng the crystallization anneal in oxygen. Additionally, the forming gas anneal promoted the growth of tall bismuth-platinum towers that origi nated from the platinum layer and grew through the SET film. Surroundi ng the towers, local areas of increased roughness and porosity were ob served on the SET film.