THE ROLE OF LEAKAGE CURRENT ON THE MEMORY WINDOW AND MEMORY RETENTIONIN MFIS STRUCTURE

Authors
LIM M KALKUR TS
Citation
M. Lim et Ts. Kalkur, THE ROLE OF LEAKAGE CURRENT ON THE MEMORY WINDOW AND MEMORY RETENTIONIN MFIS STRUCTURE, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 725-731
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
725 - 731
Database
ISI
SICI code
1058-4587(1998)22:1-4<725:TROLCO>2.0.ZU;2-O
Abstract
Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure has been fabricated with Strontium Bismuth Tantalate (SBT) ferroelectric and Yt trium oxide as the buffer layer between ferroelectric and silicon. Cap acitance versus voltage (C-V) analysis shows that memory window is fou nd to be dependent on charge injection and charge retention in MFIS st ructure. Analysis of current versus voltage (I-V) characteristics show that the memory window and retention is strongly dependent on the lea kage current in the MFIS structure.