INFLUENCE OF THE GROWTH TEMPERATURE ON THE EPITAXIAL QUALITY OF PBTIO3 FILMS DEPOSITED IN-SITU BY SPUTTERING

Thin films of lead titanate were prepared in-situ on SrTiO3 substrates using radio-frequency magnetron sputter deposition. The epitaxial qua lity of the films has been studied as a function of the substrate temp erature. Stoichiometric films have been obtained in the temperature ra nge [550 degrees C, 600 degrees C]. The films deposited in the equilib rium zone have a high degree of c-axis oriented epitaxial crystalline structure as shown by X-ray diffraction in the 2 theta/theta, theta an d phi scans configuration as well as by electron channeling pattern. T he optimum conditions for growing epitaxial PbTiO3 layers were determi ned. The crystallinity of films deposited al 550 degrees C is superior to those deposited at 600 degrees C. The PbTiO3 films grown at 550 de grees C have a rocking curve full width at half maximum (FWHM) of 0.2 degrees; Normaski optical and atomic force microscopy show that the su rface is apparently free of grain boundaries and very smooth. The refr active index of these films has been evaluated from transmission spect ra; it is very close to the bulk material value.